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S29GL01GS10TFI020

Infineon Technologies Logo
797-S29GL01GS10TFI02

S29GL01GS10TFI020

メーカ:

詳細:
NORフラッシュ 1G 3V 100ns Parallel NORフラッシュ

ECADモデル:
無料のライブラリローダーをダウンロードし、お使いのECADツール用にこのファイルを変換してください。ECADモデルの詳細について

在庫: 958

在庫:

958 すぐに出荷可能

工場リードタイム:

53 週間 表示されている時間を超える工場生産予定時間。
 
最小: 1   倍数: 1

¥-
¥-

価格 (JPY)

数量 ユニット価格
合計 額
1 ¥2,008.3 ¥2,008
10 ¥1,858.9 ¥18,589
25 ¥1,834.3 ¥45,858
50 ¥1,811.1 ¥90,555
100 ¥1,586.3 ¥158,630
250 ¥1,555.9 ¥388,975
2,730 見積り
製品属性 属性値
Infineon
製品カテゴリー: NORフラッシュ
RoHS:  詳細
SMD/SMT
TSOP-56
S29GL01G/512/256/128S
1 Gbit
2.7 V
3.6 V
Parallel
64 M x 16
16 bit
Asynchronous
- 40 C
+ 85 C
Tray
アーキテクチャ: Eclipse
ブランド: Infineon Technologies
メモリ タイプ: NOR
水分感度: Yes
製品タイプ: NOR Flash
速度: 100 ns
工場パックの数量: 910
サブカテゴリ: Memory & Data Storage
トレードネーム: MirrorBit
単位重量: 17.327 g

JPHTS:
8542320312
CNHTS:
8542329000
CAHTS:
8542320090
USHTS:
8542320071
KRHTS:
8542321040
TARIC:
8542326100
MXHTS:
8542320299
ECCN:
3A991.b.1.a

MirrorBit® NOR GL Flash Memory Device

Infineon Technologies MirrorBit® NOR GL Flash Memory Devices include the 100ns access speeds. This additional offering of Cypress MirrorBit® NOR GL Flash Memory now provides the fastest access times in the high-density versions available. MirrorBit® NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption. Cypress MirrorBit® GL NOR Flash family is optimized for various embedded applications' voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB to 2GB, each MirrorBit® NOR GL Flash Memory Device requires only a 3.0V power supply for reading and writing functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MirrorBit® GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.

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