|
|
GaN FET 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
- IGI60L1414B1MXUMA1
- Infineon Technologies
-
1:
¥1,259
-
2,352在庫
-
新製品
|
Mouser 部品番号
726-IGI60L1414B1MXUM
新製品
|
Infineon Technologies
|
GaN FET 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
|
|
2,352在庫
|
|
|
¥1,259
|
|
|
¥913.6
|
|
|
¥853.8
|
|
|
¥727.5
|
|
|
表示
|
|
|
¥574.7
|
|
|
¥712.6
|
|
|
¥642.8
|
|
|
¥637.8
|
|
|
¥574.7
|
|
最低: 1
複数: 1
:
3,000
|
|
|
SMD/SMT
|
TFLGA-27
|
170 mOhms
|
- 40 C
|
+ 150 C
|
CoolGaN
|
|
|
|
GaN FET 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
- IGI60L2727B1MXUMA1
- Infineon Technologies
-
1:
¥863.7
-
2,371在庫
-
新製品
|
Mouser 部品番号
726-IGI60L2727B1MXUM
新製品
|
Infineon Technologies
|
GaN FET 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
|
|
2,371在庫
|
|
|
¥863.7
|
|
|
¥654.4
|
|
|
¥601.3
|
|
|
¥543.1
|
|
|
表示
|
|
|
¥495
|
|
|
¥516.6
|
|
|
¥506.6
|
|
|
¥496.6
|
|
|
¥495
|
|
最低: 1
複数: 1
:
3,000
|
|
|
SMD/SMT
|
TFLGA-27
|
170 mOhms
|
- 40 C
|
+ 150 C
|
CoolGaN
|
|
|
|
GaN FET 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
- IGI60L5050B1MXUMA1
- Infineon Technologies
-
1:
¥681
-
2,082在庫
-
新製品
|
Mouser 部品番号
726-IGI60L5050B1MXUM
新製品
|
Infineon Technologies
|
GaN FET 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
|
|
2,082在庫
|
|
|
¥681
|
|
|
¥509.9
|
|
|
¥468.4
|
|
|
¥420.2
|
|
|
表示
|
|
|
¥332.2
|
|
|
¥398.6
|
|
|
¥387
|
|
|
¥372.1
|
|
|
¥332.2
|
|
最低: 1
複数: 1
:
3,000
|
|
|
SMD/SMT
|
TFLGA-27
|
170 mOhms
|
- 40 C
|
+ 150 C
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Drive HB 600 V G5
- IGI60L1111B1MXUMA1
- Infineon Technologies
-
1:
¥1,127.8
-
45在庫
-
3,000予想2026/07/09
-
新製品
|
Mouser 部品番号
726-IGI60L1111B1MXUM
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Drive HB 600 V G5
|
|
45在庫
3,000予想2026/07/09
|
|
|
¥1,127.8
|
|
|
¥868.7
|
|
|
¥803.9
|
|
|
¥732.5
|
|
|
表示
|
|
|
¥596.3
|
|
|
¥699.3
|
|
|
¥677.7
|
|
|
¥661.1
|
|
|
¥596.3
|
|
最低: 1
複数: 1
:
3,000
|
|
|
SMD/SMT
|
TFLGA-27
|
|
- 40 C
|
+ 150 C
|
CoolGaN
|
|