TQP3M9040 & TQP3M9041 Dual Low Noise Amplifiers

Qorvo TQP3M9040 and TQP3M9041 Dual Low Noise Amplifiers (LNA) consist of a single monolithic GaAs (Gallium Arsenide) E-pHEMT (Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor) die and integrate bias circuitry as well as shut-down capability. This design enables the TQP3M9040 and TQP3M9041 LNAs to be useful for both Frequency Division Duplex (FDD) and Time Division Duplex (TDD) applications. Both devices do not require a negative supply for operation and are bias adjustable for both drain current and voltage. These balanced amplifiers are optimized for high performance receivers in wireless infrastructure and can be used for base-station transceivers or tower mounted amplifiers.