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ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
- YQ10RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥294.4
-
7,578在庫
|
Mouser 部品番号
755-YQ10RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
|
|
7,578在庫
|
|
|
¥294.4
|
|
|
¥206.4
|
|
|
¥144.6
|
|
|
¥114.9
|
|
|
表示
|
|
|
¥102.1
|
|
|
¥107.2
|
|
|
¥103.5
|
|
|
¥102.1
|
|
最低： 1
複数： 1
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
10 A
|
100 V
|
610 mV
|
200 A
|
80 uA
|
+ 175 C
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10CDFHTL
- ROHM Semiconductor
-
1:
¥417.6
-
1,900在庫
|
Mouser 部品番号
755-YQ20NL10CDFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1,900在庫
|
|
|
¥417.6
|
|
|
¥288
|
|
|
¥203.2
|
|
|
¥196.8
|
|
|
¥172.8
|
|
|
¥160
|
|
最低： 1
複数： 1
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Dual Anode Common Cathode
|
Si
|
20 A
|
100 V
|
650 mV
|
150 A
|
70 uA
|
+ 150 C
|
Reel, Cut Tape, MouseReel
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10SEFHTL
- ROHM Semiconductor
-
1:
¥404.8
-
2,000在庫
|
Mouser 部品番号
755-YQ20NL10SEFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
2,000在庫
|
|
|
¥404.8
|
|
|
¥251.2
|
|
|
¥176
|
|
|
¥163.2
|
|
|
¥130.1
|
|
最低： 1
複数： 1
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
200 A
|
80 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
- YQ20BM10SDFHTL
- ROHM Semiconductor
-
1:
¥256
-
400在庫
|
Mouser 部品番号
755-YQ20BM10SDFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
|
|
400在庫
|
|
|
¥256
|
|
|
¥180.8
|
|
|
¥143.8
|
|
|
¥118.7
|
|
|
¥91.8
|
|
|
表示
|
|
|
¥103.8
|
|
|
¥90.7
|
|
|
¥86.4
|
|
最低： 1
複数： 1
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-252-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
150 A
|
80 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ30NL10SEFHTL
- ROHM Semiconductor
-
1:
¥499.2
-
1,280在庫
|
Mouser 部品番号
755-YQ30NL10SEFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1,280在庫
|
|
|
¥499.2
|
|
|
¥281.6
|
|
|
¥198.4
|
|
|
¥190.4
|
|
|
¥179.2
|
|
|
¥154.7
|
|
最低： 1
複数： 1
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
30 A
|
100 V
|
780 mV
|
200 A
|
150 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
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