|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
- YQ10RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥299.9
-
7,033在庫
|
Mouser 部品番号
755-YQ10RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
|
|
7,033在庫
|
|
|
¥299.9
|
|
|
¥210.3
|
|
|
¥147.4
|
|
|
¥117
|
|
|
表示
|
|
|
¥104
|
|
|
¥109.2
|
|
|
¥105.5
|
|
|
¥104
|
|
最低： 1
複数： 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
10 A
|
100 V
|
610 mV
|
200 A
|
80 uA
|
+ 175 C
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10CDFHTL
- ROHM Semiconductor
-
1:
¥550.9
-
1,900在庫
|
Mouser 部品番号
755-YQ20NL10CDFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1,900在庫
|
|
|
¥550.9
|
|
|
¥357
|
|
|
¥254.3
|
|
|
¥207
|
|
|
¥189.1
|
|
|
¥187.5
|
|
最低： 1
複数： 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Dual Anode Common Cathode
|
Si
|
20 A
|
100 V
|
650 mV
|
150 A
|
70 uA
|
+ 150 C
|
Reel, Cut Tape, MouseReel
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10SEFHTL
- ROHM Semiconductor
-
1:
¥464.6
-
2,000在庫
|
Mouser 部品番号
755-YQ20NL10SEFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
2,000在庫
|
|
|
¥464.6
|
|
|
¥299.9
|
|
|
¥215.2
|
|
|
¥179.3
|
|
|
¥155.2
|
|
最低： 1
複数： 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
200 A
|
80 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ30NL10SEFHTL
- ROHM Semiconductor
-
1:
¥508.6
-
1,244在庫
|
Mouser 部品番号
755-YQ30NL10SEFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1,244在庫
|
|
|
¥508.6
|
|
|
¥286.9
|
|
|
¥202.1
|
|
|
¥194
|
|
|
¥182.6
|
|
|
¥180.9
|
|
最低： 1
複数： 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
30 A
|
100 V
|
780 mV
|
200 A
|
150 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
- YQ20BM10SDFHTL
- ROHM Semiconductor
-
1:
¥260.8
-
7,500取寄中
|
Mouser 部品番号
755-YQ20BM10SDFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
|
|
7,500取寄中
取寄中:
2,500 予想2026/05/27
5,000 予想2026/07/06
|
|
|
¥260.8
|
|
|
¥184.2
|
|
|
¥149.5
|
|
|
¥116.4
|
|
|
¥107.7
|
|
|
¥100.7
|
|
最低： 1
複数： 1
:
2,500
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-252-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
150 A
|
80 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
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