|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
- YQ20BM10SDFHTL
- ROHM Semiconductor
-
1:
¥345.5
-
2,500在庫
-
5,000予想2026/07/28
|
Mouser 部品番号
755-YQ20BM10SDFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
|
|
2,500在庫
5,000予想2026/07/28
|
|
|
¥345.5
|
|
|
¥219.3
|
|
|
¥154.3
|
|
|
¥125.7
|
|
|
¥103.8
|
|
|
表示
|
|
|
¥114.4
|
|
|
¥103.1
|
|
最低： 1
複数： 1
:
2,500
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-252-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
150 A
|
80 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
- YQ10RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥375.4
-
6,783在庫
|
Mouser 部品番号
755-YQ10RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
|
|
6,783在庫
|
|
|
¥375.4
|
|
|
¥240.8
|
|
|
¥162.3
|
|
|
¥129.1
|
|
|
表示
|
|
|
¥106.1
|
|
|
¥118.4
|
|
|
¥111.6
|
|
|
¥106.1
|
|
最低： 1
複数： 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
10 A
|
100 V
|
610 mV
|
200 A
|
80 uA
|
+ 175 C
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10CDFHTL
- ROHM Semiconductor
-
1:
¥574.7
-
1,900在庫
|
Mouser 部品番号
755-YQ20NL10CDFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1,900在庫
|
|
|
¥574.7
|
|
|
¥373.7
|
|
|
¥259.1
|
|
|
¥210.9
|
|
|
¥192.7
|
|
|
¥191
|
|
最低： 1
複数： 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Dual Anode Common Cathode
|
Si
|
20 A
|
100 V
|
650 mV
|
150 A
|
70 uA
|
+ 150 C
|
Reel, Cut Tape, MouseReel
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10SEFHTL
- ROHM Semiconductor
-
1:
¥508.3
-
2,000在庫
|
Mouser 部品番号
755-YQ20NL10SEFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
2,000在庫
|
|
|
¥508.3
|
|
|
¥327.2
|
|
|
¥225.9
|
|
|
¥182.7
|
|
|
¥169.4
|
|
|
¥163.4
|
|
最低： 1
複数： 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
200 A
|
80 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ30NL10SEFHTL
- ROHM Semiconductor
-
1:
¥559.8
-
1,244在庫
|
Mouser 部品番号
755-YQ30NL10SEFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1,244在庫
|
|
|
¥559.8
|
|
|
¥365.4
|
|
|
¥252.5
|
|
|
¥204.3
|
|
|
¥196
|
|
|
¥184.4
|
|
最低： 1
複数： 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
30 A
|
100 V
|
780 mV
|
200 A
|
150 uA
|
+ 150 C
|
Reel, Cut Tape
|
|
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