|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045SE-T1GE3
- Vishay Semiconductors
-
1:
¥2,138.6
-
800予想2026/08/12
-
新製品
|
Mouser 部品番号
78-MXP120A045S-T1GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800予想2026/08/12
|
|
|
¥2,138.6
|
|
|
¥1,687.1
|
|
|
¥1,429.5
|
|
|
¥1,235.5
|
|
|
¥1,132.9
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
82 nC
|
- 55 C
|
+ 175 C
|
268 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045SL-GE3
- Vishay Semiconductors
-
1:
¥2,076.6
-
600予想2026/08/19
-
新製品
|
Mouser 部品番号
78-MXP120A045SL-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2026/08/19
|
|
|
¥2,076.6
|
|
|
¥1,546.9
|
|
|
¥1,289.3
|
|
|
¥1,149.2
|
|
|
¥1,087.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
51 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
83 nC
|
- 55 C
|
+ 175 C
|
254 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045SW-GE3
- Vishay Semiconductors
-
1:
¥2,058.7
-
600予想2026/08/19
-
新製品
|
Mouser 部品番号
78-MXP120A045SW-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2026/08/19
|
|
|
¥2,058.7
|
|
|
¥1,533.8
|
|
|
¥1,277.9
|
|
|
¥1,139.4
|
|
|
¥1,077.4
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247AD-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
51 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
84 nC
|
- 55 C
|
+ 175 C
|
254 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A063SE-T1GE3
- Vishay Semiconductors
-
1:
¥1,664.2
-
799予想2026/09/17
-
新製品
|
Mouser 部品番号
78-MXP120A063S-T1GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
799予想2026/09/17
|
|
|
¥1,664.2
|
|
|
¥1,176.9
|
|
|
¥979.6
|
|
|
¥873.7
|
|
|
¥826.4
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
58 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A063SL-GE3
- Vishay Semiconductors
-
1:
¥1,810.9
-
599予想2026/09/16
-
新製品
|
Mouser 部品番号
78-MXP120A063SL-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
599予想2026/09/16
|
|
|
¥1,810.9
|
|
|
¥1,281.2
|
|
|
¥1,067.7
|
|
|
¥951.9
|
|
|
¥899.8
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
39 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
61 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A080SE-T1GE3
- Vishay Semiconductors
-
1:
¥1,515.9
-
799予想2026/09/16
-
新製品
|
Mouser 部品番号
78-MXP120A080S-T1GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
799予想2026/09/16
|
|
|
¥1,515.9
|
|
|
¥1,036.7
|
|
|
¥854.1
|
|
|
¥761.2
|
|
|
¥720.5
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
32 A
|
100 mOhms
|
- 10 V, 22 V
|
2.9 V
|
47 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A080SL-GE3
- Vishay Semiconductors
-
1:
¥1,672.4
-
599予想2026/09/16
-
新製品
|
Mouser 部品番号
78-MXP120A080SL-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
599予想2026/09/16
|
|
|
¥1,672.4
|
|
|
¥1,142.6
|
|
|
¥942.1
|
|
|
¥839.5
|
|
|
¥793.8
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
31 A
|
100 mOhms
|
- 10 V, 22 V
|
2.9 V
|
45 nC
|
- 55 C
|
+ 175 C
|
174 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A045SE-1GE3
- Vishay Semiconductors
-
1:
¥2,032.6
-
800予想2026/08/19
-
新製品
|
Mouser 部品番号
78-MXPQ120A045S-1GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800予想2026/08/19
|
|
|
¥2,032.6
|
|
|
¥1,514.3
|
|
|
¥1,261.6
|
|
|
¥1,124.7
|
|
|
¥1,064.4
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
82 nC
|
- 55 C
|
+ 175 C
|
268 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A045SW-GE3
- Vishay Semiconductors
-
1:
¥2,159.8
-
600予想2026/08/19
-
新製品
|
Mouser 部品番号
78-MXPQ120A045SW-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2026/08/19
|
|
|
¥2,159.8
|
|
|
¥1,610.4
|
|
|
¥1,341.5
|
|
|
¥1,196.4
|
|
|
¥1,131.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
51 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
83 nC
|
- 55 C
|
+ 175 C
|
254 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A063SL-GE3
- Vishay Semiconductors
-
1:
¥1,858.2
-
600予想2026/09/16
-
新製品
|
Mouser 部品番号
78-MXPQ120A063SL-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2026/09/16
|
|
|
¥1,858.2
|
|
|
¥1,344.8
|
|
|
¥1,119.8
|
|
|
¥999.2
|
|
|
¥943.8
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
39 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
61 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A080SL-GE3
- Vishay Semiconductors
-
1:
¥1,680.5
-
600予想2026/09/17
-
新製品
|
Mouser 部品番号
78-MXPQ120A080SL-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2026/09/17
|
|
|
¥1,680.5
|
|
|
¥1,188.3
|
|
|
¥989.4
|
|
|
¥881.8
|
|
|
¥834.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
39 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
61 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
