|
|
GaN FET CoolGaN Transistor 120 V G3 in PQFN 3x5, 2.7 mohm
- IGC037S12S1XTMA1
- Infineon Technologies
-
1:
¥700.8
-
8,919在庫
-
新製品
|
Mouser 部品番号
726-IGC037S12S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 120 V G3 in PQFN 3x5, 2.7 mohm
|
|
8,919在庫
|
|
|
¥700.8
|
|
|
¥470.4
|
|
|
¥348.8
|
|
|
¥310.4
|
|
|
¥283.2
|
|
|
¥238.4
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
|
|
1 Channel
|
120 V
|
71 A
|
3.7 mOhms
|
6.5 V
|
2.9 V
|
13 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm
- IGB070S10S1XTMA1
- Infineon Technologies
-
1:
¥520
-
3,840在庫
-
新製品
|
Mouser 部品番号
726-IGB070S10S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm
|
|
3,840在庫
|
|
|
¥520
|
|
|
¥337.6
|
|
|
¥248
|
|
|
¥208
|
|
|
¥187.2
|
|
|
¥158.4
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
|
|
1 Channel
|
100 V
|
38 A
|
7 mOhms
|
6.5 V
|
2.9 V
|
6.1 nC
|
- 40 C
|
+ 150 C
|
23 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
- IGB110S10S1XTMA1
- Infineon Technologies
-
1:
¥379.2
-
3,399在庫
-
新製品
|
Mouser 部品番号
726-IGB110S10S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
|
|
3,399在庫
|
|
|
¥379.2
|
|
|
¥243.2
|
|
|
¥168
|
|
|
¥142.2
|
|
|
¥126.1
|
|
|
¥107
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
|
|
1 Channel
|
100 V
|
23 A
|
11 mOhms
|
6.5 V
|
2.9 V
|
3.4 nC
|
- 40 C
|
+ 150 C
|
15 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm
- IGC019S06S1XTMA1
- Infineon Technologies
-
1:
¥700.8
-
3,577在庫
-
新製品
|
Mouser 部品番号
726-IGC019S06S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm
|
|
3,577在庫
|
|
|
¥700.8
|
|
|
¥470.4
|
|
|
¥348.8
|
|
|
¥310.4
|
|
|
¥286.4
|
|
|
¥243.2
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
|
|
1 Channel
|
60 V
|
99 A
|
1.9 mOhms
|
6.5 V
|
2.9 V
|
13 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm
- IGC025S08S1XTMA1
- Infineon Technologies
-
1:
¥700.8
-
6,355在庫
-
新製品
|
Mouser 部品番号
726-IGC025S08S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm
|
|
6,355在庫
|
|
|
¥700.8
|
|
|
¥470.4
|
|
|
¥348.8
|
|
|
¥310.4
|
|
|
¥286.4
|
|
|
¥243.2
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
|
|
1 Channel
|
80 V
|
86 A
|
2.5 mOhms
|
6.5 V
|
2.9 V
|
12 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET MV GAN DISCRETES
- IGB110S101XTMA1
- Infineon Technologies
-
1:
¥379.2
-
2,250在庫
-
新製品
|
Mouser 部品番号
726-IGB110S101XTMA1
新製品
|
Infineon Technologies
|
GaN FET MV GAN DISCRETES
|
|
2,250在庫
|
|
|
¥379.2
|
|
|
¥243.2
|
|
|
¥168
|
|
|
¥142.2
|
|
|
¥121
|
|
|
¥102.7
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
PG-VSON-4
|
HEMT
|
1 Channel
|
100 V
|
23 A
|
|
- 4 V, + 5.5 V
|
2.9 V
|
3.4 nC
|
- 40 C
|
+ 150 C
|
15 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET MV GAN DISCRETES
- IGC033S101XTMA1
- Infineon Technologies
-
1:
¥678.4
-
5,415在庫
-
新製品
|
Mouser 部品番号
726-IGC033S101XTMA1
新製品
|
Infineon Technologies
|
GaN FET MV GAN DISCRETES
|
|
5,415在庫
|
|
|
¥678.4
|
|
|
¥462.4
|
|
|
¥366.4
|
|
|
¥310.4
|
|
|
¥286.4
|
|
|
¥243.2
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
PG-VSON-6
|
HEMT
|
1 Channel
|
100 V
|
76 A
|
3.3 mOhms
|
- 4 V, + 5.5 V
|
2.9 V
|
11 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET MV GAN DISCRETES
- IGC033S10S1XTMA1
- Infineon Technologies
-
1:
¥678.4
-
1,225在庫
-
10,000予想2026/02/23
-
新製品
|
Mouser 部品番号
726-IGC033S10S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET MV GAN DISCRETES
|
|
1,225在庫
10,000予想2026/02/23
|
|
|
¥678.4
|
|
|
¥462.4
|
|
|
¥366.4
|
|
|
¥310.4
|
|
|
¥297.6
|
|
|
¥251.2
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
PG-TSON-6
|
HEMT
|
1 Channel
|
100 V
|
76 A
|
3.3 mOhms
|
- 4 V, + 5.5 V
|
2.9 V
|
11 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|