|
|
GaN FET CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm
- IGC025S08S1XTMA1
- Infineon Technologies
-
1:
¥749.8
-
9,083在庫
-
新製品
|
Mouser 部品番号
726-IGC025S08S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm
|
|
9,083在庫
|
|
|
¥749.8
|
|
|
¥474.3
|
|
|
¥348.8
|
|
|
¥298.3
|
|
|
¥286.9
|
|
|
¥242.9
|
|
最低: 1
複数: 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
80 V
|
86 A
|
2.5 mOhms
|
6.5 V
|
2.9 V
|
12 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET MV GAN DISCRETES
- IGC033S10S1XTMA1
- Infineon Technologies
-
1:
¥744.9
-
8,406在庫
-
新製品
|
Mouser 部品番号
726-IGC033S10S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET MV GAN DISCRETES
|
|
8,406在庫
|
|
|
¥744.9
|
|
|
¥469.4
|
|
|
¥348.8
|
|
|
¥298.3
|
|
|
¥278.7
|
|
|
¥242.9
|
|
最低: 1
複数: 1
:
5,000
|
|
|
SMD/SMT
|
PG-TSON-6
|
HEMT
|
1 Channel
|
100 V
|
76 A
|
3.3 mOhms
|
- 4 V, + 5.5 V
|
2.9 V
|
11 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm
- IGB070S10S1XTMA1
- Infineon Technologies
-
1:
¥547.7
-
3,500在庫
-
新製品
|
Mouser 部品番号
726-IGB070S10S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm
|
|
3,500在庫
|
|
|
¥547.7
|
|
|
¥347.2
|
|
|
¥247.8
|
|
|
¥202.1
|
|
|
表示
|
|
|
¥159.9
|
|
|
¥197.2
|
|
|
¥189.1
|
|
|
¥159.9
|
|
最低: 1
複数: 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
100 V
|
38 A
|
7 mOhms
|
6.5 V
|
2.9 V
|
6.1 nC
|
- 40 C
|
+ 150 C
|
23 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
- IGB110S10S1XTMA1
- Infineon Technologies
-
1:
¥365.1
-
2,452在庫
-
新製品
|
Mouser 部品番号
726-IGB110S10S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
|
|
2,452在庫
|
|
|
¥365.1
|
|
|
¥226.6
|
|
|
¥161.4
|
|
|
¥134.8
|
|
|
¥106.1
|
|
|
表示
|
|
|
¥123.4
|
|
|
¥121.4
|
|
|
¥100.7
|
|
最低: 1
複数: 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
100 V
|
23 A
|
11 mOhms
|
6.5 V
|
2.9 V
|
3.4 nC
|
- 40 C
|
+ 150 C
|
15 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm
- IGC019S06S1XTMA1
- Infineon Technologies
-
1:
¥749.8
-
2,993在庫
-
新製品
|
Mouser 部品番号
726-IGC019S06S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm
|
|
2,993在庫
|
|
|
¥749.8
|
|
|
¥474.3
|
|
|
¥348.8
|
|
|
¥298.3
|
|
|
¥278.7
|
|
|
¥242.9
|
|
最低: 1
複数: 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
60 V
|
99 A
|
1.9 mOhms
|
6.5 V
|
2.9 V
|
13 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET MV GAN DISCRETES
- IGC033S101XTMA1
- Infineon Technologies
-
1:
¥749.8
-
3,653在庫
-
新製品
|
Mouser 部品番号
726-IGC033S101XTMA1
新製品
|
Infineon Technologies
|
GaN FET MV GAN DISCRETES
|
|
3,653在庫
|
|
|
¥749.8
|
|
|
¥474.3
|
|
|
¥348.8
|
|
|
¥298.3
|
|
|
¥278.7
|
|
|
¥242.9
|
|
最低: 1
複数: 1
:
5,000
|
|
|
SMD/SMT
|
PG-VSON-6
|
HEMT
|
1 Channel
|
100 V
|
76 A
|
3.3 mOhms
|
- 4 V, + 5.5 V
|
2.9 V
|
11 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET CoolGaN Transistor 120 V G3 in PQFN 3x5, 2.7 mohm
- IGC037S12S1XTMA1
- Infineon Technologies
-
1:
¥741.7
-
3,170在庫
-
10,000予想2026/07/23
-
新製品
|
Mouser 部品番号
726-IGC037S12S1XTMA1
新製品
|
Infineon Technologies
|
GaN FET CoolGaN Transistor 120 V G3 in PQFN 3x5, 2.7 mohm
|
|
3,170在庫
10,000予想2026/07/23
|
|
|
¥741.7
|
|
|
¥479.2
|
|
|
¥348.8
|
|
|
¥298.3
|
|
|
¥278.7
|
|
|
¥242.9
|
|
最低: 1
複数: 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
120 V
|
71 A
|
3.7 mOhms
|
6.5 V
|
2.9 V
|
13 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
GaN FET MV GAN DISCRETES
- IGB110S101XTMA1
- Infineon Technologies
-
1:
¥392.8
-
1,885在庫
-
新製品
|
Mouser 部品番号
726-IGB110S101XTMA1
新製品
|
Infineon Technologies
|
GaN FET MV GAN DISCRETES
|
|
1,885在庫
|
|
|
¥392.8
|
|
|
¥242.9
|
|
|
¥169.5
|
|
|
¥136.8
|
|
|
¥106.1
|
|
|
表示
|
|
|
¥123.4
|
|
|
¥121.4
|
|
|
¥100.7
|
|
最低: 1
複数: 1
:
5,000
|
|
|
SMD/SMT
|
PG-VSON-4
|
HEMT
|
1 Channel
|
100 V
|
23 A
|
|
- 4 V, + 5.5 V
|
2.9 V
|
3.4 nC
|
- 40 C
|
+ 150 C
|
15 W
|
Enhancement
|
CoolGaN
|
|