個別半導体のタイプ
Navitas Semiconductor NV6427 Bi-Directional GaNFast™ Power Switches
02/26/2026
02/26/2026
Switches are designed to block voltage in both directions, with unique substrate-clamp technology.
Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches
02/26/2026
02/26/2026
Designed to block voltage in both directions using unique substrate clamp technology.
Navitas Semiconductor NV60x GaNFast™ Power FETs
02/26/2026
02/26/2026
Enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems.
Navitas Semiconductor SiCPAK™ F/G 1200V High-Power Modules
02/20/2025
02/20/2025
Robust, high-voltage SiC MOSFETs, critical for reliable, harsh-environment, high-power applications.
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
09/06/2024
09/06/2024
Ideal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.
Navitas Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
09/03/2024
Enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs).
Navitas Semiconductor Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
09/03/2024
Developed using a proprietary trench-assisted planar technology for high-speed performance.
Navitas Semiconductor 650V SiC Schottky MPS™ Diodes
09/03/2024
09/03/2024
Combine excellent forward and switching characteristics with best-in-class thermal conductivity.
Navitas Semiconductor 4th Generation SiC Schottky MPS™ Diodes
06/08/2022
06/08/2022
Thin Chip Technology for low VF, enhanced surge and avalanche robustness, and a superior FOM.
表示: 1～10/10
Infineon Technologies OptiMOS™ 7 100V Automotive Power MOSFETs
05/27/2026
05/27/2026
Advanced N‑channel devices engineered for high-efficiency power switching.
Bourns CDSOT23-SM712-Q 表面実装 TVSダイオード
05/12/2026
05/12/2026
データポート向けにIEC 61000-4-2、IEC 61000-4-4、およびIEC 61000-4-5に準拠した保護機能を提供します。
Infineon Technologies CIPOS™ Prime車載用CoolSiC™ パワーモジュール
05/06/2026
05/06/2026
xEVアプリケーションでハイパフォーマンスを発揮するように設計されています。
Littelfuse TP5.0SMD-FL FlatSuppressX™ TVSダイオード
05/04/2026
05/04/2026
10/1000µs 波形使用時の 5000W ピークパルス電力および 6.5W の電力損失
Littelfuse QVx35xHx高温オルタニスタトライアック
04/24/2026
04/24/2026
定格電流35Aに対応し、TO-220AB、絶縁型TO-220、およびTO-263パッケージで提供されています。
RECOM Power ICs, Transformers, & Discrete Solutions
04/24/2026
04/24/2026
Features components ideal for energy, industrial, and medical applications.
Diotec Semiconductor BAS70-05W Schottky Diode
04/16/2026
04/16/2026
Designed for high‑speed switching and voltage clamping in space‑constrained applications.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04/07/2026
04/07/2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes
04/02/2026
04/02/2026
AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.
Vishay VS-HOT200C080 200A 80VパワーMOSFETモジュール
04/02/2026
04/02/2026
このデバイスは、標準のディスクリートソリューションと比べて基板占有面積を最大15%削減します。
Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes
04/02/2026
04/02/2026
High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.
STMicroelectronics STL059N4S8AGパワーMOSFET
03/31/2026
03/31/2026
Smart STripFET F8テクノロジーで設計された40V Nチャンネル拡張モード対応パワーMOSFETです。
Infineon Technologies OptiMOS™ 6 60VパワーMOSFET
03/27/2026
03/27/2026
堅牢なパワーMOSFETテクノロジーにより、OptiMOS 5を超える優れた性能を提供します。
Infineon Technologies NチャンネルOptiMOS™ 7 25VパワーMOSFET
03/27/2026
03/27/2026
アプリケーションに最適化された性能により、データセンター、サーバー、AIのピーク性能を実現します。
表示: 1～25/1204