個別半導体のタイプ
適用されたフィルタ:
IXYS MMIX1T500N20X4 200V X4クラス パワーMOSFET
10/08/2025
10/08/2025
セラミックベースの絶縁型パッケージにより、全体的なRth(j-s) と電力処理能力が向上しています。
IXYS IXSA80N120L2-7 SiC MOSFET
03/06/2025
03/06/2025
1,200V、 30mΩ 、79A工業グレードデバイスが特徴のシングルスイッチMOSFETで、TO263-7Lパッケージに収められています。
IXYS IXSA40N120L2-7 SiC MOSFET
03/06/2025
03/06/2025
1,200V、 80mΩ 、41A工業グレードデバイスが特徴のシングルスイッチMOSFETで、TO263-7Lパッケージに収められています。
IXYS DPF100C1200HB 1,200V、2x 50A高速リカバリダイオード
11/22/2024
11/22/2024
2つの汎用パワースイッチングダイオードで、コモンカソード構成になっており、TO-247パッケージに収められています。
IXYS DSEP60-06AZ 600V 60A高速リカバリダイオード
07/08/2024
07/08/2024
高性能、低損失、ソフトリカバリシングルダイオードで、TO-268AA(D3PAK-HV)パッケージに収められています。
表示: 1~25/27
onsemi NVMFD5873NL Dual N-Channel Power MOSFETs
03/13/2026
03/13/2026
Designed for compact and efficient designs, including high thermal performance.
Texas Instruments TVS2210 Flat-Clamp Surge Protection Device
03/12/2026
03/12/2026
Designed to robustly shunt up to 25A of fault current to protect from transients or lightning.
Micro Commercial Components (MCC) BAT46L2 Schottky Diode
03/12/2026
03/12/2026
150mW small-signal Schottky diode designed for high‑speed switching applications.
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.
Qorvo QPD2560L 300W GaN/SiC HEMT
03/09/2026
03/09/2026
Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03/06/2026
03/06/2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
Diotec Semiconductor MM3Z3V0-AQ Zener Diode
03/06/2026
03/06/2026
Offers a 300mW power dissipation rating and comes in a compact SOD‑323F surface‑mount package.
Diotec Semiconductor MMS3Z18BGW-AQ Zener Diode
03/06/2026
03/06/2026
Housed in a compact SOD‑323 surface‑mount package, providing a 300mW power dissipation.
Diotec Semiconductor BZX84B4V3-AQ Zener Diode
03/06/2026
03/06/2026
Features 4.3V nominal Zener voltage with ±2% tolerance and 3μA leakage current at 1V.
Diotec Semiconductor SIT04C065 SiC Schottky Diode
03/06/2026
03/06/2026
Supports a 650V repetitive peak reverse voltage and delivers a 4A average forward rectified current.
Diotec Semiconductor BZX84B20-AQ Zener Diode
03/06/2026
03/06/2026
Features 20V nominal Zener voltage, 0.050µA leakage current, and 55Ω dynamic resistance.
Diotec Semiconductor MM5Z6V8B-AQ Zener Diode
03/06/2026
03/06/2026
Housed in an ultra‑small SOD‑523 surface‑mount package and AEC‑Q101 qualified.
Diotec Semiconductor TPSMA6L20A-AQ TVS Diode
03/06/2026
03/06/2026
AEC‑Q101 qualified unidirectional diode built in compact SMAF (DO‑221AC) low‑profile package.
EPC EPC2302 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.
EPC EPC2305 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.
EPC EPC2304 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Handles tasks where ultra-high switching frequency and low on-time are advantageous.
Infineon Technologies NチャンネルOptiMOS™ 7 80VパワーMOSFET
03/05/2026
03/05/2026
80V、N チャネルのノーマルレベルデバイスで、PG‑TDSON‑8 パッケージにおいて優れた熱抵抗特性を備えています。
Diotec Semiconductor GBI40M-T Single Phase Bridge Rectifier
03/03/2026
03/03/2026
Equipped with four diodes in a bridge configuration and protected against reverse assembly.
Diotec Semiconductor BAT54WT Schottky Diode
03/03/2026
03/03/2026
Designed for high-speed switching, low junction capacitance, and low leakage current.
表示: 1~25/1234
