SiT8008 Low Power Programmable Oscillators

SiTime SiT8008 and SiT8008B low-power programmable oscillators include a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. The programmable drive strength improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. The programmable drive strength also improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. The components have the ability to drive large capacitive loads while maintaining full swing with sharp edge rates. The oscillators exhibit EMI reduction by slowing rise/fall time and jitter reduction with faster rise/fall time. Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The components have high output load capability. The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. The devices can support up to 60pF or higher in maximum capacitive loads with drive strength settings.

結果: 2
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SiTime 標準クロック発振器 125.MHz -20C +70C 3.3V 50ppm N/A
最低: 1
複数: 1
リール: 250

Standard Oscillators 3.2 mm x 2.5 mm 125 MHz 50 PPM 30 pF 2.97 V 3.63 V LVCMOS, HCMOS SMD/SMT - 20 C + 70 C 3.2 mm (0.126 in) 2.5 mm (0.098 in) 0.75 mm (0.03 in) SiT8009B Reel, Cut Tape, MouseReel
SiTime 標準クロック発振器 125MHz -20C +70C 3.3V 50ppm 在庫なし
最低: 1
複数: 1
リール: 250

Standard Oscillators 7 mm x 5 mm 125 MHz 50 PPM 30 pF 2.97 V 3.63 V LVCMOS, HCMOS SMD/SMT - 20 C + 70 C 7 mm (0.276 in) 5 mm (0.197 in) 0.9 mm (0.035 in) SiT8009B Reel, Cut Tape, MouseReel