Japanese Yen Incoterms:DDP with Consumption Tax added at checkout All prices include duty and customs fees. Free shipping on most orders over ¥6,000 (JPY).
US Dollars Incoterms:FCA (Shipping Point) Duty, customs fees and Consumption Tax collected at time of delivery. Free shipping on most orders over $50 (USD).
Images are for reference only See Product Specifications
The link could not be generated at this time. Please try again.
PowerGaN E-Mode G-HEMT™ Transistors
STMicroelectronics PowerGaN E-Mode G-HEMT™ Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.