1200V SIC MOSFETs

Microchip Technology 1200V SIC MOSFETs offer high efficiency in a lighter, more compact solution. The devices supply low internal gate resistance (ESR), resulting in a fast switching speed. The MOSFETs are simple to drive and easy to parallel, with improved thermal capabilities and lower switching losses.

Results: 8
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 20 mOhm TO-247-4 Notch 25In Stock
¥2,727.4
¥2,514.8
¥2,187.5
¥2,094.5
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 97 A 24 mOhms - 10 V, 21 V 3 V 136 nC - 55 C + 175 C 416 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch 56In Stock
¥2,257.3
¥2,082.9
¥1,812.2
¥1,734.1
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 81 A 33 mOhms - 10 V, 21 V 5 V 109 nC - 55 C + 175 C 357 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch 95In Stock
¥1,586.3
¥1,463.3
¥1,272.3
¥1,219.2
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 54 A 53 mOhms - 10 V, 21 V 5 V 69 nC - 55 C + 175 C 256 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 45 mOhm TO-247-4 Notch 120In Stock
¥1,475
¥1,360.4
¥1,184.3
¥1,134.5
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 49 A 60 mOhms - 10 V, 21 V 5 V 61 nC - 55 C + 175 C 237 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 60 mOhm TO-247-4 Notch 97In Stock
¥1,214.2
¥1,121.2
¥975
¥933.5
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 38 A 80 mOhms - 10 V, 21 V 5 V 45 nC - 55 C + 175 C 192 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 80 mOhm TO-247-4 Notch 67In Stock
¥1,043.1
¥961.7
¥837.1
¥802.3
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 30 A 107 mOhms - 10 V, + 21 V 5 V 34 nC - 55 C + 175 C 161 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 30 mOhm TO-247-4 Notch 115In Stock
¥1,938.4
¥1,787.2
¥1,556.4
¥1,489.9
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 69 A 40 mOhms - 10 V, 21 V 5 V 91 nC - 55 C + 175 C 310 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 31 mOhm TO-247-4 Notch Non-Stocked Lead-Time 6 Weeks
¥2,189.2
¥1,905.2
¥1,823.8
Min.: 60
Mult.: 30
Through Hole TO-247-4 1 Channel 1.2 kV 72 A 42 mOhms - 10 V, 21 V 5 V 70 nC - 55 C + 175 C 326 W Enhancement