|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
- IMCQ120R010M2HXTMA1
- Infineon Technologies
-
1:
¥5,547.7
-
7在庫
-
3,750取寄中
-
新製品
|
Mouser 部品番号
726-IMCQ120R010M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
|
|
7在庫
3,750取寄中
|
|
最低: 1
複数: 1
:
750
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R018CM2HXKSA1
- Infineon Technologies
-
1:
¥3,023
-
176在庫
-
新製品
|
Mouser 部品番号
726-IMY120R018CM2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
176在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
1 Channel
|
1.2 kV
|
80 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
73 nC
|
- 40 C
|
+ 175 C
|
356 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036AM2HXKSA1
- Infineon Technologies
-
1:
¥2,174.2
-
215在庫
-
新製品
|
Mouser 部品番号
726-IMY120R036AM2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
215在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
171 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
¥7,027.7
-
398在庫
-
720予想2026/12/17
-
新製品
|
Mouser 部品番号
726-IMZC120R007M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
398在庫
720予想2026/12/17
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036CM2HXKSA1
- Infineon Technologies
-
1:
¥2,177.6
-
172在庫
-
新製品
|
Mouser 部品番号
726-IMY120R036CM2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
172在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
- IMCQ120R007M2HXTMA1
- Infineon Technologies
-
1:
¥6,921.4
-
1,212在庫
-
3,000取寄中
-
新製品
|
Mouser 部品番号
726-IMCQ120R007M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
|
|
1,212在庫
3,000取寄中
取寄中:
750 予想2027/03/04
2,250 予想2027/07/15
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
|
1.2 kV
|
257 A
|
7.5 mOhms
|
|
4.2 V
|
|
- 55 C
|
+ 175 C
|
1.172 kW
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
- IMCQ120R017M2HXTMA1
- Infineon Technologies
-
1:
¥3,317
-
1,443在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R017M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
|
|
1,443在庫
|
|
最低: 1
複数: 1
:
750
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R012M2HHXUMA1
- Infineon Technologies
-
1:
¥7,353.2
-
556在庫
-
新製品
|
Mouser 部品番号
726-IMSQ120R012M2HHX
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
556在庫
|
|
最低: 1
複数: 1
:
750
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
¥2,433.4
-
1,690在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R026M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,690在庫
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
1 Channel
|
1.2 kV
|
82 A
|
67 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
63.4 nC
|
- 55 C
|
+ 175 C
|
405 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R034M2HXTMA1
- Infineon Technologies
-
1:
¥2,061.3
-
1,081在庫
-
750予想2027/05/13
-
新製品
|
Mouser 部品番号
726-IMCQ120R034M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,081在庫
750予想2027/05/13
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
1 Channel
|
1.2 kV
|
64 A
|
89 mOhms
|
- 10 V, + 25 C
|
5.1 V
|
48.7 nC
|
- 55 C
|
+ 175 C
|
326 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R040M2HXTMA1
- Infineon Technologies
-
1:
¥1,916.8
-
911在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R040M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
911在庫
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
1 Channel
|
1.2 kV
|
56 A
|
104 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
42.4 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
¥1,609.5
-
316在庫
-
750予想2026/11/05
-
新製品
|
Mouser 部品番号
726-IMCQ120R053M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
316在庫
750予想2026/11/05
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
1 Channel
|
1.2 kV
|
43 A
|
138 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
32.8 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
¥1,413.5
-
2,294在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R078M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
2,294在庫
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
1 Channel
|
1.2 kV
|
31 A
|
205 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
23.2 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R026M2HHXUMA1
- Infineon Technologies
-
1:
¥4,052.8
-
672在庫
-
新製品
|
Mouser 部品番号
726-IMSQ120R026M2HHX
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
672在庫
|
|
最低: 1
複数: 1
:
750
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R040M2HHXUMA1
- Infineon Technologies
-
1:
¥3,300.4
-
450在庫
-
新製品
|
Mouser 部品番号
726-IMSQ120R040M2HHX
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
450在庫
|
|
最低: 1
複数: 1
:
750
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R022M2HXKSA1
- Infineon Technologies
-
1:
¥3,160.9
-
267在庫
-
新製品
|
Mouser 部品番号
726-IMZA120R022M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
267在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
80 A
|
29 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R040M2HXKSA1
- Infineon Technologies
-
1:
¥2,066.3
-
238在庫
-
新製品
|
Mouser 部品番号
726-IMZA120R040M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
238在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
48 A
|
51 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R053M2HXKSA1
- Infineon Technologies
-
1:
¥1,715.8
-
1,428在庫
-
新製品
|
Mouser 部品番号
726-IMZA120R053M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
1,428在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
38 A
|
69 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
¥6,418.1
-
1,600在庫
-
1,000予想2026/10/15
|
Mouser 部品番号
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,600在庫
1,000予想2026/10/15
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
¥4,614.3
-
2,083在庫
|
Mouser 部品番号
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2,083在庫
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R017M2HXKSA1
- Infineon Technologies
-
1:
¥3,562.8
-
28在庫
-
480取寄中
-
新製品
|
Mouser 部品番号
726-IMZA120R017M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
28在庫
480取寄中
取寄中:
240 予想2026/11/12
240 予想2026/11/19
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
97 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R026M2HXKSA1
- Infineon Technologies
-
1:
¥2,627.7
-
44在庫
-
240予想2026/11/03
-
新製品
|
Mouser 部品番号
726-IMZA120R026M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
44在庫
240予想2026/11/03
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
69 A
|
34 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R034M2HXKSA1
- Infineon Technologies
-
1:
¥2,139.4
-
78在庫
-
240予想2027/02/11
-
新製品
|
Mouser 部品番号
726-IMZA120R034M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
78在庫
240予想2027/02/11
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
55 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
¥2,958.2
-
245在庫
|
Mouser 部品番号
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
245在庫
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
¥2,247.3
-
1,603在庫
|
Mouser 部品番号
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,603在庫
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|