GaN FETs – Mouser Japan

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QPD1426/QPD1426L GaN RF Power Transistors

Qorvo QPD1426/QPD1426L GaN RF Power Transistors are 220W discrete GaN-on-SiC HEMTs that operate from 1.2GHz to 1.4GHz, providing typically 53.5dBm of saturated output power with 17dB of large-signal gain and 70% drain efficiency.

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (JPY) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Mounting Style	Package / Case	Transistor Polarity	Number of Channels	Id - Continuous Drain Current	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Maximum Operating Frequency	Minimum Operating Frequency	Technology
	GaN FETs 1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor QPD1426 Qorvo 1: ¥85,946.8 10Expected 11/26/2026 New Product	Mfr. Part # QPD1426 Mouser Part # 772-QPD1426 New Product	Qorvo	GaN FETs 1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor Learn More about Qorvo qpd1426 gan rf power transistor	Datasheet	10Expected 11/26/2026	¥85,946.8 ¥74,379.6 ¥71,486.1	Min.: 1 Mult.: 1			SMD/SMT	NI-400-2	N-Channel	1 Channel	7 A	- 40 C	+ 85 C	221 W	2 GHz	0 Hz	GaN-on-SiC
	GaN FETs 1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor QPD1426L Qorvo 1: ¥85,946.8 10Expected 11/26/2026 New Product	Mfr. Part # QPD1426L Mouser Part # 772-QPD1426L New Product	Qorvo	GaN FETs 1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor Learn More about Qorvo qpd1426 gan rf power transistor	Datasheet	10Expected 11/26/2026	¥85,946.8 ¥74,379.6 ¥71,486.1	Min.: 1 Mult.: 1			SMD/SMT	NI-400-2	N-Channel	1 Channel	7 A	- 40 C	+ 85 C	221 W	2 GHz	0 Hz	GaN-on-SiC

QPD1426/QPD1426L GaN RF Power Transistors

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