GaN FETs – Mouser Japan

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Vds - Drain-Source Breakdown Voltage

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Vgs th - Gate-Source Threshold Voltage

Qg - Gate Charge

Pd - Power Dissipation

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (JPY) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Mounting Style	Package / Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Technology
	GaN FETs GAN7R0-150LBE/SOT8073/FCLGA GAN7R0-150LBEZ Nexperia 1: ¥647.8 1,840In Stock	Mfr. Part # GAN7R0-150LBEZ Mouser Part # 771-GAN7R0-150LBEZ	Nexperia	GaN FETs GAN7R0-150LBE/SOT8073/FCLGA Learn More about Nexperia gan emode fets	Datasheet	1,840In Stock	Cut Tape ¥647.8 ¥340.5 ¥304 ¥254.1 Reel ¥212.6 View ¥249.2 ¥207.6 MouseReel Available	Min.: 1 Mult.: 1 : 2,500			SMD/SMT	FCLGA-3	N-Channel	1 Channel	150 V	28 A	7 mOhms	- 6 V, + 6 V	2.1 V	7.6 nC	- 40 C	+ 150 C	28 W	Enhancement	GaN
	GaN FETs GAN3R2-100CBE/SOT8072/WLCSP8 GAN3R2-100CBEAZ Nexperia 1: ¥827.2 539In Stock	Mfr. Part # GAN3R2-100CBEAZ Mouser Part # 771-GAN3R2-100CBEAZ	Nexperia	GaN FETs GAN3R2-100CBE/SOT8072/WLCSP8 Learn More about Nexperia gan emode fets	Datasheet	539In Stock	Cut Tape ¥827.2 ¥428.5 ¥388.7 ¥338.8 Reel ¥287.4 View ¥289 ¥275.7 MouseReel Available	Min.: 1 Mult.: 1 : 1,500			SMD/SMT	WLCSP-8	N-Channel	1 Channel	100 V	60 A	3.2 mOhms	- 6 V, + 6 V	2.5 V	12 nC	- 40 C	+ 150 C	394 W	Enhancement	GaN

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