|
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET
- IMZC140R011M2HXKSA1
- Infineon Technologies
-
1:
¥4,556.1
-
168在庫
-
新製品
|
Mouser 部品番号
726-IMZC140R011M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET
|
|
168在庫
|
|
最低: 1
複数: 1
:
240
|
|
|
Through Hole
|
PG-TO247-4
|
1 Channel
|
1.4 kV
|
147 A
|
31.3 Ohms
|
- 10 V to 25 V
|
4.2 V
|
130 nC
|
- 55 C
|
+ 175 C
|
568 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package
- IMYR140R008M2HXLSA1
- Infineon Technologies
-
1:
¥6,713.8
-
565在庫
-
新製品
|
Mouser 部品番号
726-IMYR140R008M2HXL
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package
|
|
565在庫
|
|
最低: 1
複数: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
SiC MOSFET SIC DISCRETE
- IMYR140R006M2HXLSA1
- Infineon Technologies
-
1:
¥8,427.9
-
190在庫
-
新製品
|
Mouser 部品番号
726-IMYR140R006M2HXL
新製品
|
Infineon Technologies
|
SiC MOSFET SIC DISCRETE
|
|
190在庫
|
|
最低: 1
複数: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
SiC MOSFET SIC DISCRETE
- IMYR140R011M2HXLSA1
- Infineon Technologies
-
1:
¥4,901.6
-
224在庫
-
新製品
|
Mouser 部品番号
726-IMYR140R011M2HXL
新製品
|
Infineon Technologies
|
SiC MOSFET SIC DISCRETE
|
|
224在庫
|
|
最低: 1
複数: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
SiC MOSFET SIC DISCRETE
- IMYR140R024M2HXLSA1
- Infineon Technologies
-
1:
¥2,767.2
-
230在庫
-
新製品
|
Mouser 部品番号
726-IMYR140R024M2HXL
新製品
|
Infineon Technologies
|
SiC MOSFET SIC DISCRETE
|
|
230在庫
|
|
最低: 1
複数: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
- IMZC140R029M2HXKSA1
- Infineon Technologies
-
1:
¥2,320.4
-
342在庫
-
新製品
|
Mouser 部品番号
726-IMZC140R029M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
|
|
342在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.4 kV
|
65 A
|
35 mOhms
|
- 10 V, + 25 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
- IMZC140R038M2HXKSA1
- Infineon Technologies
-
1:
¥2,056.3
-
448在庫
-
240予想2027/09/02
-
新製品
|
Mouser 部品番号
726-IMZC140R038M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
|
|
448在庫
240予想2027/09/02
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.4 kV
|
52 A
|
38 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
41 nC
|
- 55 C
|
+ 175 C
|
242 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package
- IMYR140R019M2HXLSA1
- Infineon Technologies
-
1:
¥3,200.7
-
77在庫
-
新製品
|
Mouser 部品番号
726-IMYR140R019M2HXL
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package
|
|
77在庫
|
|
最低: 1
複数: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
SiC MOSFET SIC DISCRETE
- IMYR140R029M2HXLSA1
- Infineon Technologies
-
1:
¥2,491.5
-
174在庫
-
240予想2026/10/15
-
新製品
|
Mouser 部品番号
726-IMYR140R029M2HXL
新製品
|
Infineon Technologies
|
SiC MOSFET SIC DISCRETE
|
|
174在庫
240予想2026/10/15
|
|
最低: 1
複数: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
- IMZC140R019M2HXKSA1
- Infineon Technologies
-
1:
¥2,979.8
-
134在庫
-
新製品
|
Mouser 部品番号
726-IMZC140R019M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
|
|
134在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.4 kV
|
92 A
|
53.8 mOhms
|
- 10 V, + 23 V
|
4.2 V
|
78 nC
|
- 55 C
|
+ 175 C
|
380 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
- IMZC140R024M2HXKSA1
- Infineon Technologies
-
1:
¥2,577.9
-
126在庫
-
240予想2026/11/05
-
新製品
|
Mouser 部品番号
726-IMZC140R024M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
|
|
126在庫
240予想2026/11/05
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.4 kV
|
74 A
|
67.6 Ohms
|
- 10 V, + 25 V
|
5.1 V
|
62 nC
|
- 55 C
|
+ 175 C
|
330 W
|
Enhancement
|
CoolSiC
|
|