Standard N-Channel HiPerFET™ Power MOSFETs

IXYS Standard N-Channel HiPerFET™ Power MOSFETs are designed for both hard switching and resonant mode applications. These devices offer low gate charge and excellent ruggedness with a fast intrinsic diode. IXYS Standard N-Channel HiPerFET™ Power MOSFETs are available in many standard industrial packages, including isolated types.

Results: 8
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
IXYS MOSFETs 3 Amps 1200V 4.50 Rds 415In Stock
¥1,931.7
¥1,119.5
¥996.6
¥948.4
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs 3 Amps 1200V 4.5 Rds 1,528In Stock
¥1,101.2
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs IXFA3N120 TRL Non-Stocked Lead-Time 26 Weeks
Reel
¥1,171
Min.: 800
Mult.: 800
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 39 nC - 55 C + 150 C 200 W Enhancement Reel
IXYS MOSFETs IXFA3N120 TRR Non-Stocked Lead-Time 26 Weeks
Reel
¥1,171
Min.: 800
Mult.: 800
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 39 nC - 55 C + 150 C 200 W Enhancement Reel
IXYS MOSFETs 180 Amps 70V 0.006 Rds Non-Stocked Lead-Time 34 Weeks
¥3,023
¥2,312.1
Min.: 25
Mult.: 25
Si Through Hole TO-264-3 N-Channel 1 Channel 70 V 180 A 6 mOhms 20 V - 55 C + 150 C 560 W Enhancement HiPerFET Tube

IXYS MOSFETs 180 Amps 70V 0.006 Rds Non-Stocked
¥3,491.4
¥2,607.8
¥2,254
¥2,134.4
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 70 V 180 A 6 mOhms 20 V - 55 C + 150 C 400 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 38A Non-Stocked Lead-Time 25 Weeks
¥4,376.7
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 130 mOhms 20 V 2.5 V 330 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 44A Non-Stocked Lead-Time 26 Weeks
¥5,318.5
¥4,340.2
¥3,860.2
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 44 A 130 mOhms 20 V 4.5 V 330 nC - 55 C + 150 C 560 W Enhancement HiPerFET Tube