SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

Results: 31
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1,034In Stock
¥3,973.1
¥2,471.6
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs Nch 1200V 95A SiC TO-247N 495In Stock
¥8,092.4
¥7,170.5
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 72A 30mOhm TrenchMOS 683In Stock
¥12,927.6
¥11,452.6
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V 55A 262W SIC 40mOhm TO-247N
450In Stock
¥8,210.3
¥7,114.1
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 1200V 72A 339W SIC 30mOhm TO-247N
341In Stock
¥10,887.9
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 650V 118A 427W SIC 17mOhm TO-247N
351In Stock
¥19,966.9
¥19,136.4
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 650V 70A 262W SIC 30mOhm TO-247N
366In Stock
¥7,743.6
¥6,732
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 1200V 95A 427W SIC 22mOhm TO-247N
199In Stock
¥20,780.8
¥20,254.2
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 1200V 24A 134W SIC 105mOhm TO-247N
1,619In Stock
¥3,315.4
¥2,564.6
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 650V 39A 165W SIC 60mOhm TO-247N
428In Stock
¥4,142.5
¥2,964.9
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Nch 1200V 24A SiC TO-247N 169In Stock
¥2,890.1
¥2,582.9
¥2,476.6
¥2,458.3
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFETs 650V 21A 103W SIC 120mOhm TO-247N
450In Stock
¥1,456.7
¥1,013.2
¥983.3
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 650V 30A 134W SIC 80mOhm TO-247N
366In Stock
¥3,237.3
¥2,290.5
¥2,268.9
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N
171In Stock
¥4,298.7
¥3,124.3
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs TO247 650V 70A N-CH SIC 195In Stock
¥8,547.5
¥6,546
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 70 A 30 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFETs 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 529In Stock
¥3,594.4
¥2,845.3
¥2,461.6
¥2,328.7
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 30 A 80 mOhms - 4 V, + 22 V 5.6 V 48 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 650V 39A N-CH SIC 704In Stock
¥4,433.2
¥2,881.8
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 60 mOhms - 4 V, + 22 V 5.6 V 58 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 1.2KV 55A N-CH SIC 61In Stock
¥8,939.5
¥6,916.4
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 1.2KV 31A N-CH SIC 150In Stock
¥3,159.2
¥1,870.3
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 87In Stock
¥3,096.1
¥2,375.2
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 24 A 105 mOhms - 4 V, + 22 V 5.6 V 51 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 1200V 160mO 3rd Gen TO-263-7LA 990In Stock
Cut Tape
¥1,642.7
¥905.2
¥843.8
Reel
¥797.3
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V, 17A, 7-pin SMD, Trench-structure, (SiC) MOSFET 753In Stock
Cut Tape
¥1,606.2
¥883.7
¥818.9
Reel
¥774
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 93A 22mOhm TrenchMOS 188In Stock
¥9,329.8
¥6,692.2
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS 84In Stock
¥5,630.8
¥3,645.9
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 39A 60mOhm TrenchMOS 1,069In Stock
¥2,800.4
¥1,566.3
¥1,528.1
¥1,526.5
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement