DMT47M2LDVQ Dual N-Channel Enhancement-Mode MOSFET

Diodes Inc. DMT47M2LDVQ Dual N-Channel Enhancement-Mode MOSFET is a 40V MOSFET with a low RDS(ON) that minimizes on-state losses. The device offers low input capacitance and fast switching speed. Diodes Inc. DMT47M2LDVQ MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified for AEC-Q101 and is supported by a PPAP.

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Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Packaging
Diodes Incorporated MOSFETs MOSFET BVDSS: 31V-40V PowerDI3333-8 T&R 2K
Datasheet
334In Stock
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT PowerDI3333-8 N-Channel 2 Channel 40 V 30.2 A 10.8 mOhms 20 V 2.3 V 14 nC - 55 C + 150 C 2.34 W Enhancement Reel, Cut Tape
Diodes Incorporated MOSFETs MOSFET BVDSS: 31V-40V PowerDI3333-8 T&R 2K
Datasheet
15In Stock
10,000On Order
MouseReel Available
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT PowerDI3333-8 N-Channel 2 Channel 40 V 30.2 A 10.8 mOhms 20 V 2.3 V 14 nC - 55 C + 150 C 2.34 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFETs MOSFET BVDSS: 31V-40V PowerDI3333-8 T&R 3K
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

Si SMD/SMT PowerDI3333-8 N-Channel 2 Channel 40 V 30.2 A 10.8 mOhms 20 V 2.3 V 14 nC - 55 C + 150 C 2.34 W Enhancement Reel
Diodes Incorporated MOSFETs MOSFET BVDSS: 31V-40V PowerDI3333-8 T&R 3K
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT PowerDI3333-8 N-Channel 2 Channel 40 V 30.2 A 10.8 mOhms 20 V 2.3 V 14 nC - 55 C + 150 C 2.34 W Enhancement AEC-Q101 Reel, Cut Tape