|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045SE-T1GE3
- Vishay Semiconductors
-
1:
¥2,029.7
-
800予想2026/10/14
-
新製品
|
Mouser 部品番号
78-MXP120A045S-T1GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800予想2026/10/14
|
|
|
¥2,029.7
|
|
|
¥1,468.3
|
|
|
¥1,222.5
|
|
|
¥1,089.6
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
82 nC
|
- 55 C
|
+ 175 C
|
268 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045SL-GE3
- Vishay Semiconductors
-
1:
¥2,114.5
-
600予想2026/10/14
-
新製品
|
Mouser 部品番号
78-MXP120A045SL-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2026/10/14
|
|
|
¥2,114.5
|
|
|
¥1,574.6
|
|
|
¥1,312.2
|
|
|
¥1,169.3
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
51 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
83 nC
|
- 55 C
|
+ 175 C
|
254 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045SW-GE3
- Vishay Semiconductors
-
1:
¥2,096.2
-
600予想2026/10/14
-
新製品
|
Mouser 部品番号
78-MXP120A045SW-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2026/10/14
|
|
|
¥2,096.2
|
|
|
¥1,561.3
|
|
|
¥1,300.6
|
|
|
¥1,159.4
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247AD-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
51 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
84 nC
|
- 55 C
|
+ 175 C
|
254 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A063SE-T1GE3
- Vishay Semiconductors
-
1:
¥1,694.2
-
799予想2026/10/28
-
新製品
|
Mouser 部品番号
78-MXP120A063S-T1GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
799予想2026/10/28
|
|
|
¥1,694.2
|
|
|
¥1,197.6
|
|
|
¥996.6
|
|
|
¥888.6
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
58 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A063SL-GE3
- Vishay Semiconductors
-
1:
¥1,837.1
-
599予想2026/10/28
-
新製品
|
Mouser 部品番号
78-MXP120A063SL-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
599予想2026/10/28
|
|
|
¥1,837.1
|
|
|
¥1,176
|
|
|
¥1,021.5
|
|
|
¥918.5
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
39 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
61 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A080SE-T1GE3
- Vishay Semiconductors
-
1:
¥1,543.1
-
799予想2026/10/28
-
新製品
|
Mouser 部品番号
78-MXP120A080S-T1GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
799予想2026/10/28
|
|
|
¥1,543.1
|
|
|
¥1,054.7
|
|
|
¥868.7
|
|
|
¥774
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
32 A
|
100 mOhms
|
- 10 V, 22 V
|
2.9 V
|
47 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A080SL-GE3
- Vishay Semiconductors
-
1:
¥1,702.5
-
583予想2026/10/28
-
新製品
|
Mouser 部品番号
78-MXP120A080SL-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
583予想2026/10/28
|
|
|
¥1,702.5
|
|
|
¥1,162.7
|
|
|
¥958.4
|
|
|
¥853.8
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
31 A
|
100 mOhms
|
- 10 V, 22 V
|
2.9 V
|
45 nC
|
- 55 C
|
+ 175 C
|
174 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A160SL-GE3
- Vishay / Siliconix
-
1:
¥1,416.8
-
600予想2027/01/20
-
新製品
|
Mouser 部品番号
78-MXP120A160SL-GE3
新製品
|
Vishay / Siliconix
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2027/01/20
|
|
|
¥1,416.8
|
|
|
¥1,021.5
|
|
|
¥892
|
|
|
¥860.4
|
|
|
表示
|
|
|
¥818.9
|
|
|
見積り
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247AD-4L
|
N-Channel
|
1 Channel
|
1.2 kV
|
18 A
|
200 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
25 nC
|
- 55 C
|
+ 175 C
|
109 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A250SE-T1GE3
- Vishay / Siliconix
-
1:
¥1,066.4
-
800予想2027/01/20
-
新製品
|
Mouser 部品番号
78-MXP120A250SE-TGE3
新製品
|
Vishay / Siliconix
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800予想2027/01/20
|
|
|
¥1,066.4
|
|
|
¥757.4
|
|
|
¥657.8
|
|
|
¥627.9
|
|
|
¥598
|
|
|
¥591.3
|
|
最低: 1
複数: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7L
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
313 mOhms
|
- 10 V, + 22 V
|
3 V
|
15 nC
|
- 55 C
|
+ 175 C
|
85 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120C040W-GE3
- Vishay / Siliconix
-
1:
¥2,247.3
-
600予想2027/02/17
-
新製品
|
Mouser 部品番号
78-MXP120C040W-GE3
新製品
|
Vishay / Siliconix
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2027/02/17
|
|
|
¥2,247.3
|
|
|
¥1,652.7
|
|
|
¥1,460
|
|
|
¥1,413.5
|
|
|
¥1,350.4
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247AD-3L
|
N-Channel
|
1 Channel
|
1.2 kV
|
53 A
|
54 mOhms
|
- 10 V, + 22 V
|
2.9 V
|
69 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A045SE-1GE3
- Vishay Semiconductors
-
1:
¥2,069.6
-
800予想2026/10/28
-
新製品
|
Mouser 部品番号
78-MXPQ120A045S-1GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800予想2026/10/28
|
|
|
¥2,069.6
|
|
|
¥1,541.4
|
|
|
¥1,284
|
|
|
¥1,144.4
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
82 nC
|
- 55 C
|
+ 175 C
|
268 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A045SW-GE3
- Vishay Semiconductors
-
1:
¥2,199.2
-
600予想2026/10/28
-
新製品
|
Mouser 部品番号
78-MXPQ120A045SW-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2026/10/28
|
|
|
¥2,199.2
|
|
|
¥1,639.4
|
|
|
¥1,365.3
|
|
|
¥1,217.5
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
51 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
83 nC
|
- 55 C
|
+ 175 C
|
254 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A063SE-1GE3
- Vishay / Siliconix
-
1:
¥1,529.8
-
800予想2026/11/18
-
新製品
|
Mouser 部品番号
78-MXPQ120A063SE-GE3
新製品
|
Vishay / Siliconix
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800予想2026/11/18
|
|
|
¥1,529.8
|
|
|
¥1,106.2
|
|
|
¥968.4
|
|
|
¥926.8
|
|
|
¥885.3
|
|
最低: 1
複数: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7L
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
79 mOhms
|
- 10 V, + 22 V
|
2.9 V
|
58 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A063SL-GE3
- Vishay Semiconductors
-
1:
¥1,891.9
-
600予想2026/10/28
-
新製品
|
Mouser 部品番号
78-MXPQ120A063SL-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2026/10/28
|
|
|
¥1,891.9
|
|
|
¥1,368.7
|
|
|
¥1,139.4
|
|
|
¥1,016.5
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
39 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
61 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A080SE-1GE3
- Vishay / Siliconix
-
1:
¥1,382
-
800予想2026/11/18
-
新製品
|
Mouser 部品番号
78-MXPQ120A080SE-GE3
新製品
|
Vishay / Siliconix
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800予想2026/11/18
|
|
|
¥1,382
|
|
|
¥994.9
|
|
|
¥868.7
|
|
|
¥830.5
|
|
|
¥797.3
|
|
|
表示
|
|
|
¥792.3
|
|
|
見積り
|
|
最低: 1
複数: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7L
|
N-Channel
|
1 Channel
|
1.2 kV
|
32 A
|
100 mOhms
|
- 10 V, + 22 V
|
2.9 V
|
47 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A080SL-GE3
- Vishay Semiconductors
-
1:
¥1,710.8
-
600予想2026/10/28
-
新製品
|
Mouser 部品番号
78-MXPQ120A080SL-GE3
新製品
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2026/10/28
|
|
|
¥1,710.8
|
|
|
¥1,209.2
|
|
|
¥1,006.6
|
|
|
¥896.9
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
39 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
61 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120C040W-GE3
- Vishay / Siliconix
-
1:
¥2,350.3
-
600予想2027/02/17
-
新製品
|
Mouser 部品番号
78-MXPQ120C040W-GE3
新製品
|
Vishay / Siliconix
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600予想2027/02/17
|
|
|
¥2,350.3
|
|
|
¥1,730.8
|
|
|
¥1,529.8
|
|
|
¥1,481.6
|
|
|
¥1,431.8
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247AD-3L
|
N-Channel
|
1 Channel
|
1.2 kV
|
53 A
|
54 mOhms
|
- 10 V, + 22 V
|
2.9 V
|
69 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|