Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package / Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Packaging

onsemi IGBTs 1200V, 40A Trench Field Stop VII (FS7) Discrete IGBT 257In Stock
¥1,378.6
¥803.9
¥802.3
¥692.6
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 20 V 80 A 600 W - 55 C + 175 C FGHL40T120RWD Tube
onsemi IGBTs 1200V, 40A Field Stop VII (FS7) Discrete IGBT Fast Switching 372In Stock
¥1,008.2
¥573
¥476.7
¥456.8
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.68 V 30 V 70 A 469 W - 55 C + 175 C FGHL40T120SWD Tube

onsemi IGBTs FS4 LOW VCESAT IGBT 650V 40A TO247-3L WITH FULL RATED CURRENT DIODE 392In Stock
¥900.3
¥508.3
¥418.6
¥392
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.15 V 20 V 60 A 273 W - 55 C + 175 C FGHL40T65LQDT Tube

onsemi IGBTs 1200V, 60A Trench Field Stop VII (FS7) Discrete IGBT 89In Stock
450Expected 12/29/2026
¥1,825.4
¥1,202.6
¥906.9
Min.: 1
Mult.: 1
Max.: 450
Si TO-247-3 Through Hole Single 1.2 kV 20 V 120 A 833 W - 55 C + 175 C FGHL60T120RWD Tube

onsemi IGBTs 650V FS4 Trench IGBT 151In Stock
¥903.6
¥509.9
¥420.2
¥393.7
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 100 A 268 W - 55 C + 175 C FGH50T65SQD Tube

onsemi IGBTs 650V/35A FAST IGBT FSII T 40In Stock
90Expected 12/14/2026
¥1,099.6
¥629.5
Min.: 1
Mult.: 1
Max.: 30
Si TO-247-3 Through Hole Single 650 V 1.7 V - 20 V, 20 V 70 A 300 W - 55 C + 175 C NGTB35N65FL2 Tube

onsemi IGBTs FS4 LOW VCESAT IGBT 650V 450In Stock
¥842.1
¥553.1
¥411.9
¥313.9
¥302.3
Min.: 1
Mult.: 1
Si TO-247-4 Through Hole Single 650 V 1.15 V 20 V 80 A 341 W - 55 C + 175 C FGHL50T65LQDTL4 Tube