700V CoolGaN™ G4 Power Transistors

Infineon Technologies 700V CoolGaN™ G4 Power Transistors are enhancement-mode GaN-on-Si power transistors with properties that allow for high-current, high-voltage breakdown, and high-switching frequency. The GaN systems innovate with industry-leading advancements like patented Island Technology® cell layout which realizes high-current die and high yield. These 700V CoolGaN power transistors enable ultra-power density designs and high system efficiency in power switching. The GS-065 power transistors are housed in the bottom-side cooled PDFN package. These power transistors offer very low junction-to-case thermal resistance, making them ideal for demanding high-power applications. Some of the applications include data center and computing solutions, power adapters, LED lighting drivers, Switched Mode Power Supplies (SMPS), wireless power transfer, and motor drives.

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Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Channel Mode Maximum Operating Frequency Minimum Operating Frequency Technology
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 214In Stock
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¥1,702.5
¥946.8
¥794
Reel
¥794
¥725.9
Min.: 1
Mult.: 1
: 250
SMD/SMT TOLL-11 N-Channel 1 Channel 700 V 40 A 58 mOhms - 10 V, + 7 V 2.6 V 6.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 155In Stock
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¥963.4
¥797.3
¥426.9
Reel
¥426.9
¥367.1
¥355.5
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 88In Stock
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¥1,034.8
¥546.5
¥460.1
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¥460.1
¥450.1
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS Lead-Time 18 Weeks
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¥604.6
¥305.6
¥244.2
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¥244.2
¥212.6
¥209.3
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 4.6 A 455 mOhms - 10 V, + 7 V 2.6 V 800 pC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS Non-Stocked Lead-Time 18 Weeks
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¥837.1
¥747.5
¥378.7
Reel
¥378.7
¥377
¥367.1
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS Lead-Time 18 Weeks
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¥1,013.2
¥554.8
¥470.1
Reel
¥470.1
¥460.1
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS Lead-Time 18 Weeks
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¥1,259
¥676
¥559.8
Reel
¥559.8
¥501.6
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 23 A 90 mOhms - 10 V, + 7 V 4.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si