Ampleon BLS9G2731L LDMOS S-Band Radar Power Transistors
Ampleon BLS9G2731L LDMOS S-Band Radar Power Transistors are 400W LDMOS power transistors for S-band applications in the 2700MHz to 3100MHz frequency range. The Ampleon BLS9G2731L transistors deliver high efficiency, excellent thermal stability / ruggedness, and easy power control.
Features
- High efficiency
- Excellent ruggedness
- Designed for S-band radar applications
- Excellent thermal stability
- Easy power control
- High flexibility concerning pulse formats
- Internally matched for ease of use
- Integrated dual-sided ESD protection enables excellent off-state isolation
- Compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS)
- Ideal for S-band radar applications in the 2700MHz to 3100MHz frequency range
Specifications
- Limiting values
- 65V maximum drain-source voltage
- -6V to 13V gate-source voltage range
- +225°C maximum junction temperature
- DC
- 65V minimum drain-source breakdown voltage
- 1.5V to 2.5V gate-source threshold voltage range
- 4µA maximum drain leakage current
- 85A typical drain cut-off current
- 400nA maximum gate leakage current
- 4.2S typical forward transconductance
- 0.03Ω typical drain-source on-state resistance
- RF
- 13dB typical power gain
- -7dB typical input return loss
- 47% typical drain efficiency
- 0.3dB maximum pulse droop power
- 50ns maximum rise/fall time, 6ns typical
- 400W minimum output power at 3dB gain compression
- 2700MHz to 3100MHz frequency range
- 0.11K/W to 0.18K/W typical junction-to-case transient thermal impedance range
- SOT502A and SOT502B package options
Resources
- Application Note AN10896 - Mounting and Soldering of RF Transistors in Air Cavity Packages
- AR161075 - Measurement results of a Class-AB design for the 2700MHz to 3100MHz band with the BLS9G2731LS-400
公開: 2025-02-12
| 更新済み: 2025-11-11