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Diodes Incorporated DMG1013UW/DMG1016UDW Enhancement Mode MOSFET

Diodes Incorporated DMG1013UW/DMG1016UDW Enhancement Mode MOSFETs were designed to minimize the on-state resistance RDS(on) and yet maintain superior switching performance, making them ideal for high-efficiency power management applications. The DMG1013UW/DMG1016UDW Enhancement Mode MOSFETs from Diodes Incorporated feature low On-Resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

Features

  • DMG1013UW Additional Features
    • Low on-resistance
    • Low gate threshold voltage
    • Low input capacitance
    • Fast switching speed
    • Low input/output leakage
    • Lead-free by Design/RoHS Compliant 
    • ESD protected up to 3KV
    • Green Device
    • Qualified to AEC-Q101 standards for high reliability
  • DMG1016UDW Additional Features
    • Complementary Pair MOSFET
    • Ultra-small surface mount package
    • Lead-free/RoHS Compliant (Note 1 on datasheet)
    • ESD protected up to 2.5kV
    • Green Device
    • Qualified to AEC-Q101 standards for high reliability

Additional Resources

公開: 2012-03-02 | 更新済み: 2022-03-11