Infineon Technologies 300V to 1200V IGBTs

Infineon 300-1200V IGBTs have an extensive portfolio of IGBTs that achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.

Features

  • Low VCE (ON) trench IGBT technology
  • Low switching losses
  • Square RBSOA
  • 100% of the parts tested for ILM
  • Positive VCE(ON) temperature co-efficient
  • Ultra-fast soft recovery co-pack diode
  • Tight parameter distribution
  • Lead-Free

Applications

  • U.P.S.
  • Welding
  • Solar Inverter
  • Induction Heating
View Results ( 3 ) Page
部品番号 データシート コレクタ - エミッタ電圧 VCEO 最大値 コレクタ - エミッタ飽和電圧 最大ゲート エミッタ電圧 25 Cでのコレクターの直流 Pd - 電力損失
IKP10N60T IKP10N60T データシート 600 V 1.5 V - 20 V, 20 V 24 A 110 W
IKW20N60T IKW20N60T データシート 600 V 1.5 V - 20 V, 20 V 41 A 166 W
IKP20N60T IKP20N60T データシート 600 V 1.5 V - 20 V, 20 V 41 A 166 W
公開: 2011-09-20 | 更新済み: 2025-10-01