ISSI IS29GL032 Parallel Flash Memory Devices

ISSI IS29GL032 Parallel Flash Memory Devices feature a 256-word maximum program buffer and offer blank-check operation to verify an erased sector. These memory devices operate at a 2.7V to 3.6V V_CC input voltage range and provide program suspend, erase suspend, and resume capability. The IS29GL032 memory devices provide standby mode for low-power consumption. ISSI IS29GL032 Parallel Flash Memory Devices are used in embedded applications that require higher density, better performance, and low power consumption.

Features

2.7V to 3.6V V_CCinput voltage range
Asynchronous random or page read
- 8-word or 16-byte page size
- 25ns page access
- 70ns random access
256-word maximum program buffer
Program time
- 0.56µs per byte (1.8MB/s typical when using 256-word buffer size in buffer program without V_HH)
- 0.31µs per byte (3.2MB/s typical when using 256-word buffer size in buffer program with V_HH)
Memory organization
- 32Mb: 64KB x 64KB (uniform), or 8KB x 8KB (top or bottom boot)+ 63KB x 64KB
Program/erase suspend and resume capability
- Program suspend: Read from another sector
- Erase suspend: Read or program from another sector
Blank-check operation to verify an erased sector

Unlocks bypass, sector erase, chip erase, and buffer program capability
- Fast buffered/batch programming
- Fast sector and chip erase
WP#/ACC pin protection
- V_HH voltage on WP#/ACC to accelerate programming performance
- Protects highest/lowest sector (H/L uniform) or top/bottom 2 sectors (T/B boot)
Advanced sector protection (ASP) for software
Supports common flash interface (CFI)
Low power consumption and standby mode
Data retention
- 20 years (typical)
100K minimum erase cycles per sector
Temperature range
- -40°C to 105°C extended grade
- -40°C to 125°C automotive A3 grade