IXYS Polar2™ HiPerFET™ MOSFETs
IXYS Polar2™ HiPerFET™ MOSFETs are offered with drain current ratings of 24, 42, 52, 74, 94, and 120 Amperes. These high-performance devices retain all the features and advantages of the PolarP2 Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns).
These devices also eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses, and improving power density. The featured fast intrinsic body diode properties of these HiPerFET devices play a pivotal role in overall performance. This provides a faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies.
Features
- Low RDS(on) and Qg
- Low thermal resistance RthJC
- High power dissipation
- Dynamic dv/dt ratings
- Avalanche rated
- Simple drive requirements
- Enables high-speed switching
- Reduced component count & circuit complexity
- Cooler device operation
Applications
- SMPS/RMPS
- UPS
- PFC
- DC-DC converters
- Laser drivers
- Battery chargers
- Motor drives
- Solar inverters
- Lamp ballasts
- Robotic and servo control
Associated Product
IXYS HiPerFET™ Power MOSFETs
High-current HiPerFET™ power MOSFETs for hard switching & resonant mode applications.
公開: 2010-10-20
| 更新済み: 2022-03-11