Micron 1γ DRAM Node-Based DDR5 Memory

Micron 1γ DRAM Node-Based DDR5 Memory is a 1γ (1-gamma), sixth-generation (10nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs. This component delivers superior performance and power efficiency by building on Micron’s previous 1α (1-alpha) and 1β (1-beta) DRAM nodes. The 1γ DRAM improves performance to support the scaling of compute across a range of memory offerings, meeting the demands of future AI workload requirements. The module also offers power savings with next-generation high-K metal gate CMOS technology and design optimizations. This combination offers greater than 20% lower power, which improves thermal profiles. Micron 1γ DRAM Node-Based DDR5 Memory also provides >30% more bits-per-wafer output than the previous generation. Suitable applications include mobile, data centers, automotive, edge AI, and AI PCs.

Features

  • Enhanced performance
    • Supports scaling of compute across variety of memory offerings
    • Meets demands of future AI workload requirements
  • Power savings
    • Next-generation high-K metal gate CMOS technology
    • Design optimizations
    • >20% lower power for improved thermal profiles
  • Improved bit-density output
    • Leverages EUV lithography, design optimizations, and process innovations
    • >30% more bits-per-wafer output over previous generation
    • Ability to scale memory supply efficiently

Applications

  • Data centers
  • Edge AI
  • AI PCs
  • Mobile
  • Automotive

Advanced Technology

Infographic - Micron 1γ DRAM Node-Based DDR5 Memory

Infographic

Infographic - Micron 1γ DRAM Node-Based DDR5 Memory
公開: 2025-03-13 | 更新済み: 2025-03-14