Taiwan Semiconductor TQM0xNH04CR Power MOSFETs
Taiwan Semiconductor TQM0xNH04CR Power MOSFETs are AEC-Q101-qualified single N-channel MOSFETs. These power MOSFETs offer excellent FOM and wettable flank leads for enhanced AOI. The N-channel power MOSFETs are 100% UIS and Rg tested and operate at 175°C junction temperature. These power MOSFETs feature 40V drain-source voltage and 400A pulse drain current and come in a PDFN56U package. The TQM0xNH04CR power MOSFETs are halogen-free and RoHS-compliant. Typical applications include automotive applications, solenoid and motor drivers, and DC-to-DC converters.
Features
- Excellent FOM
- AEC-Q101 qualified
- Wettable flank leads for enhanced AOI
- 100% UIS and Rg tested
- Moisture Sensitivity Level-1 (MSL-1) per J-STD-020
- PDFN56U package
- RoHS compliant
- Halogen-free
Specifications
- PDFN56U package
- -55°C to 175°C operating junction temperature range
- 40V drain-source voltage (VDS)
- 400A pulsed drain current (IDM)
Applications
- Automotive applications
- Solenoid and motor drivers
- DC-to-DC converters
Package Outline Dimensions
Videos
View Results ( 2 ) Page
| 部品番号 | データシート | Id - 連続ドレイン電流 | Rds On - 抵抗におけるドレイン - ソース | Vgs - ゲート-ソース間電圧 | Vgs th - ゲート・ソース間しきい電圧 | Qg - ゲート電荷 | Pd - 電力損失 | 上昇時間 | 下降時間 | 標準電源切断遅延時間 | ターンオン時の標準遅延時間 |
|---|---|---|---|---|---|---|---|---|---|---|---|
| TQM019NH04CR RLG |  |
214 A | 2.3 mOhms | - 20 V, 20 V | 3.6 V | 64 nC | 150 W | 76 ns | 18 ns | 52 ns | 23 ns |
| TQM025NH04CR RLG | |
174 A | 2.5 mOhms | - 20 V, 20 V | 3.6 V | 42 nC | 136 W | 70.6 ns | 5.8 ns | 27 ns | 15.1 ns |
公開: 2023-07-17
| 更新済み: 2024-02-02