Wolfspeed / Cree XバンドGaN HEMTs & MMIC
Wolfspeed/Cree XバンドGaN HEMT & MMICワイドバンドギャップは、GaAsベースのデバイスと比較して、破壊電界を5倍、電力密度を10～20倍に増大させます。 Cree GaNコンポーネントは、より小型で、同じ動作電力用のより低い容量があります。 つまり、アンプはより広い帯域幅で動作し、良好な入出力整合を示すことができます。 Xバンドパワーアンプは、GaN HEMTおよびMMICの重要な利点のために、非効率的なGaAs pHEMTならびに信頼性の低い走行波管から距離を置いています。
The GaN HEMTs and MMICs wide-bandgap increase the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs. Typical applications include weather, defense and commercial based systems, air-traffic control, and fire-control.
特徴
- 2-Way Private Radio
- Broadband Amplifiers
- Cellular Infrastructure
- Test Instrumentation
- Class A, AB, Linear Amplifiers Suitable for OFDM, W-CDMA, EDGE, CDMA Waveforms
- Satellite Communications
- PTP Communications Links
- Marine Radar
- Pleasure Craft Radar
- Port Vessel Traffic Services
- High-Efficiency Amplifiers
