|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R018CM2HXKSA1
- Infineon Technologies
-
1:
¥3,030.2
-
198在庫
-
新製品
|
Mouser 部品番号
726-IMY120R018CM2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
198在庫
|
|
|
¥3,030.2
|
|
|
¥2,466.2
|
|
|
¥2,055.4
|
|
|
¥1,799.5
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
73 nC
|
- 40 C
|
+ 175 C
|
356 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036AM2HXKSA1
- Infineon Technologies
-
1:
¥2,057.1
-
235在庫
-
新製品
|
Mouser 部品番号
726-IMY120R036AM2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
235在庫
|
|
|
¥2,057.1
|
|
|
¥1,608.8
|
|
|
¥1,341.5
|
|
|
¥1,173.6
|
|
|
¥1,116.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
171 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036CM2HXKSA1
- Infineon Technologies
-
1:
¥2,006.5
-
225在庫
-
新製品
|
Mouser 部品番号
726-IMY120R036CM2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
225在庫
|
|
|
¥2,006.5
|
|
|
¥1,569.7
|
|
|
¥1,308.9
|
|
|
¥1,145.9
|
|
|
¥1,088.8
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R012M2HXKSA1
- Infineon Technologies
-
1:
¥3,934.8
-
140在庫
-
新製品
|
Mouser 部品番号
726-IMZA120R012M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
140在庫
|
|
最低： 1
複数： 1
最大： 10
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
|
16 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
480 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R017M2HXKSA1
- Infineon Technologies
-
1:
¥3,276.3
-
152在庫
-
新製品
|
Mouser 部品番号
726-IMZA120R017M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
152在庫
|
|
最低： 1
複数： 1
最大： 30
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R026M2HXKSA1
- Infineon Technologies
-
1:
¥2,348.8
-
185在庫
-
新製品
|
Mouser 部品番号
726-IMZA120R026M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
185在庫
|
|
|
¥2,348.8
|
|
|
¥1,483.3
|
|
|
¥1,326.8
|
|
最低： 1
複数： 1
最大： 120
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
34 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
¥6,712.3
-
302在庫
-
480予想2026/06/18
-
新製品
|
Mouser 部品番号
726-IMZC120R007M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
302在庫
480予想2026/06/18
|
|
|
¥6,712.3
|
|
|
¥5,726.2
|
|
|
¥5,009
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
N-Channel
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R022M2HXKSA1
- Infineon Technologies
-
1:
¥2,810.1
-
111在庫
-
240予想2026/06/11
-
新製品
|
Mouser 部品番号
726-IMZA120R022M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
111在庫
240予想2026/06/11
|
|
最低： 1
複数： 1
最大： 20
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
29 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R034M2HXKSA1
- Infineon Technologies
-
1:
¥1,990.2
-
138在庫
-
新製品
|
Mouser 部品番号
726-IMZA120R034M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
138在庫
|
|
最低： 1
複数： 1
最大： 20
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R040M2HXKSA1
- Infineon Technologies
-
1:
¥1,881
-
137在庫
-
新製品
|
Mouser 部品番号
726-IMZA120R040M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
137在庫
|
|
|
¥1,881
|
|
|
¥1,426.3
|
|
|
¥1,188.3
|
|
|
¥1,059.5
|
|
|
¥991
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
51 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R012M2HHXUMA1
- Infineon Technologies
-
1:
¥6,063.6
-
621在庫
-
新製品
|
Mouser 部品番号
726-IMSQ120R012M2HHX
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
621在庫
|
|
|
¥6,063.6
|
|
|
¥4,810.1
|
|
|
¥4,808.5
|
|
|
¥4,617.8
|
|
最低： 1
複数： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
¥2,810.1
-
1,705在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R022M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,705在庫
|
|
最低： 1
複数： 1
最大： 50
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
- IMCQ120R010M2HXTMA1
- Infineon Technologies
-
1:
¥4,899.8
-
1,730取寄中
-
新製品
|
Mouser 部品番号
726-IMCQ120R010M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
|
|
1,730取寄中
取寄中:
230 予想2026/08/20
750 予想2026/09/03
750 予想2026/12/10
|
|
|
¥4,899.8
|
|
|
¥3,581.1
|
|
|
¥3,470.3
|
|
|
¥3,403.4
|
|
|
¥3,240.4
|
|
最低： 1
複数： 1
:
750
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
¥2,221.7
-
1,855在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R026M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,855在庫
|
|
|
¥2,221.7
|
|
|
¥1,633.3
|
|
|
¥1,343.1
|
|
|
¥1,317
|
|
|
¥1,255.1
|
|
最低： 1
複数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
82 A
|
67 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
63.4 nC
|
- 55 C
|
+ 175 C
|
405 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R034M2HXTMA1
- Infineon Technologies
-
1:
¥1,533.8
-
574在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R034M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
574在庫
|
|
|
¥1,533.8
|
|
|
¥1,150.8
|
|
|
¥976.4
|
|
|
¥940.5
|
|
|
¥911.2
|
|
最低： 1
複数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
64 A
|
89 mOhms
|
- 10 V, + 25 C
|
5.1 V
|
48.7 nC
|
- 55 C
|
+ 175 C
|
326 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R040M2HXTMA1
- Infineon Technologies
-
1:
¥1,788.1
-
310在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R040M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
310在庫
|
|
|
¥1,788.1
|
|
|
¥1,227.4
|
|
|
¥984.5
|
|
|
¥919.3
|
|
|
¥919.3
|
|
最低： 1
複数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
104 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
42.4 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
¥1,489.8
-
377在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R053M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
377在庫
|
|
|
¥1,489.8
|
|
|
¥1,002.5
|
|
|
¥782.4
|
|
|
¥730.2
|
|
|
¥730.2
|
|
最低： 1
複数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
43 A
|
138 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
32.8 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
¥1,271.4
-
919在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R078M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
919在庫
|
|
|
¥1,271.4
|
|
|
¥919.3
|
|
|
¥673.2
|
|
|
¥614.5
|
|
|
¥614.5
|
|
最低： 1
複数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
31 A
|
205 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
23.2 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R026M2HHXUMA1
- Infineon Technologies
-
1:
¥3,713.1
-
712在庫
-
新製品
|
Mouser 部品番号
726-IMSQ120R026M2HHX
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
712在庫
|
|
|
¥3,713.1
|
|
|
¥2,795.5
|
|
|
¥2,542.8
|
|
|
¥2,422.2
|
|
|
¥2,422.2
|
|
最低： 1
複数： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R040M2HHXUMA1
- Infineon Technologies
-
1:
¥3,020.4
-
672在庫
-
新製品
|
Mouser 部品番号
726-IMSQ120R040M2HHX
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
672在庫
|
|
|
¥3,020.4
|
|
|
¥2,166.3
|
|
|
¥1,918.5
|
|
|
¥1,797.9
|
|
|
¥1,797.9
|
|
最低： 1
複数： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R053M2HHXUMA1
- Infineon Technologies
-
1:
¥2,521.6
-
331在庫
-
新製品
|
Mouser 部品番号
726-IMSQ120R053M2HHX
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
331在庫
|
|
|
¥2,521.6
|
|
|
¥1,837
|
|
|
¥1,551.8
|
|
|
¥1,449.1
|
|
|
¥1,449.1
|
|
最低： 1
複数： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
¥3,934.8
-
296在庫
-
480予想2026/06/18
-
新製品
|
Mouser 部品番号
726-IMZC120R012M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
296在庫
480予想2026/06/18
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
¥3,276.3
-
674在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R017M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
674在庫
|
|
最低： 1
複数： 1
最大： 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
¥2,435.2
-
553在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R026M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
553在庫
|
|
最低： 1
複数： 1
最大： 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
¥2,011.4
-
827在庫
-
240予想2026/06/11
-
新製品
|
Mouser 部品番号
726-IMZC120R034M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
827在庫
240予想2026/06/11
|
|
最低： 1
複数： 1
最大： 70
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
日本