|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
¥3,916.6
-
735在庫
-
NRND
|
Mouser 部品番号
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
735在庫
|
|
|
¥3,916.6
|
|
|
¥3,150.9
|
|
|
¥2,760.6
|
|
|
¥2,712.4
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
¥1,171
-
370在庫
|
Mouser 部品番号
726-IMW120R140M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
370在庫
|
|
|
¥1,171
|
|
|
¥795.6
|
|
|
¥657.8
|
|
|
¥629.5
|
|
|
¥609.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
¥2,631
-
1,234在庫
-
NRND
|
Mouser 部品番号
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1,234在庫
|
|
|
¥2,631
|
|
|
¥1,843.7
|
|
|
¥1,571.3
|
|
|
¥1,426.8
|
|
|
表示
|
|
|
¥1,357
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
¥2,134.4
-
29在庫
-
240取寄中
-
NRND
|
Mouser 部品番号
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
29在庫
240取寄中
|
|
|
¥2,134.4
|
|
|
¥1,265.7
|
|
|
¥1,076.3
|
|
|
¥936.8
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
¥1,003.2
-
10,930予想2026/07/09
|
Mouser 部品番号
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
10,930予想2026/07/09
|
|
|
¥1,003.2
|
|
|
¥657.8
|
|
|
¥483.4
|
|
|
¥430.2
|
|
|
¥382
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
¥3,059.6
-
2,160取寄中
|
Mouser 部品番号
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2,160取寄中
|
|
|
¥3,059.6
|
|
|
¥2,023.1
|
|
|
¥1,747.4
|
|
|
¥1,699.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
¥1,536.4
-
非在庫リードタイム 52 週間
-
NRND
|
Mouser 部品番号
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
非在庫リードタイム 52 週間
|
|
|
¥1,536.4
|
|
|
¥1,011.5
|
|
|
¥784
|
|
|
¥750.8
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
日本