|
|
ショットキーダイオードおよび整流器 RECT 100V 60A SM SKY BARRI
- YQ60NL10CDFHTL
- ROHM Semiconductor
-
1:
¥852.5
-
920在庫
-
新製品
|
Mouser 部品番号
755-YQ60NL10CDFHTL
新製品
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 60A SM SKY BARRI
|
|
920在庫
|
|
|
¥852.5
|
|
|
¥565.6
|
|
|
¥402.6
|
|
|
¥350.5
|
|
|
¥327.6
|
|
最低: 1
複数: 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263FL-3
|
Dual Anode Common Cathode
|
Si
|
30 A
|
100 V
|
700 mV
|
150 A
|
200 uA
|
+ 150 C
|
AEC-Q101
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 60A SM SKY BARRI
- YQ60NL10CDTL
- ROHM Semiconductor
-
1:
¥744.9
-
974在庫
-
新製品
|
Mouser 部品番号
755-YQ60NL10CDTL
新製品
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 60A SM SKY BARRI
|
|
974在庫
|
|
|
¥744.9
|
|
|
¥490.6
|
|
|
¥347.2
|
|
|
¥291.8
|
|
|
¥273.8
|
|
最低: 1
複数: 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263FL-3
|
Dual Anode Common Cathode
|
Si
|
60 A
|
100 V
|
700 mV
|
150 A
|
200 uA
|
+ 150 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 3A SM SKY BARRI
- YQ3VWM10BTFTR
- ROHM Semiconductor
-
1:
¥101.1
-
4,283在庫
-
新製品
|
Mouser 部品番号
755-YQ3VWM10BTFTR
新製品
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 3A SM SKY BARRI
|
|
4,283在庫
|
|
|
¥101.1
|
|
|
¥61.8
|
|
|
¥39.4
|
|
|
¥29.8
|
|
|
¥22.5
|
|
|
表示
|
|
|
¥26.7
|
|
|
¥20.5
|
|
|
¥17.6
|
|
|
¥17.1
|
|
最低: 1
複数: 1
:
3,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
PMDE-2
|
Single
|
Si
|
3 A
|
100 V
|
880 mV
|
30 A
|
|
+ 175 C
|
AEC-Q101
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 3A SM SKY BARRI
- YQ3VWM10BTR
- ROHM Semiconductor
-
1:
¥88
-
2,163在庫
-
新製品
|
Mouser 部品番号
755-YQ3VWM10BTR
新製品
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 3A SM SKY BARRI
|
|
2,163在庫
|
|
|
¥88
|
|
|
¥54.3
|
|
|
¥34.6
|
|
|
¥25.9
|
|
|
¥18.7
|
|
|
表示
|
|
|
¥23.1
|
|
|
¥17.4
|
|
|
¥15.2
|
|
|
¥14.2
|
|
最低: 1
複数: 1
:
3,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
PMDE-2
|
Single
|
Si
|
3 A
|
100 V
|
880 mV
|
30 A
|
10 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
- YQ20BM10SDFHTL
- ROHM Semiconductor
-
1:
¥339
-
2,500在庫
-
5,000予想2026/07/28
|
Mouser 部品番号
755-YQ20BM10SDFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
|
|
2,500在庫
5,000予想2026/07/28
|
|
|
¥339
|
|
|
¥215.2
|
|
|
¥151.4
|
|
|
¥123.4
|
|
|
¥101.9
|
|
|
表示
|
|
|
¥112.3
|
|
|
¥101.2
|
|
最低: 1
複数: 1
:
2,500
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-252-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
150 A
|
80 uA
|
+ 150 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
- YQ5LAM10CTFTR
- ROHM Semiconductor
-
1:
¥202.1
-
5,900在庫
|
Mouser 部品番号
755-YQ5LAM10CTFTR
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
|
|
5,900在庫
|
|
|
¥202.1
|
|
|
¥126.8
|
|
|
¥83.3
|
|
|
¥64.7
|
|
|
¥50.9
|
|
|
表示
|
|
|
¥58.7
|
|
|
¥46.9
|
|
|
¥46.3
|
|
|
¥45.6
|
|
最低: 1
複数: 1
:
3,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
SOD-128-2
|
Single
|
Si
|
5 A
|
100 V
|
720 mV
|
80 A
|
25 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
- YQ5LAM10ETR
- ROHM Semiconductor
-
1:
¥218.4
-
5,465在庫
|
Mouser 部品番号
755-YQ5LAM10ETR
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
|
|
5,465在庫
|
|
|
¥218.4
|
|
|
¥136.8
|
|
|
¥90.3
|
|
|
¥70.3
|
|
|
¥55.4
|
|
|
表示
|
|
|
¥63.7
|
|
|
¥51.2
|
|
|
¥50.9
|
|
|
¥50.5
|
|
最低: 1
複数: 1
:
3,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
SOD-128-2
|
Single
|
Si
|
5 A
|
100 V
|
580 mV
|
100 A
|
50 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
- YQ10RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥368.4
-
6,783在庫
|
Mouser 部品番号
755-YQ10RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
|
|
6,783在庫
|
|
|
¥368.4
|
|
|
¥236.4
|
|
|
¥159.3
|
|
|
¥126.7
|
|
|
表示
|
|
|
¥104.2
|
|
|
¥116.2
|
|
|
¥109.5
|
|
|
¥104.2
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
10 A
|
100 V
|
610 mV
|
200 A
|
80 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
- YQ10RSM10SDTL1
- ROHM Semiconductor
-
1:
¥322.7
-
7,594在庫
|
Mouser 部品番号
755-YQ10RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
|
|
7,594在庫
|
|
|
¥322.7
|
|
|
¥205.4
|
|
|
¥137.9
|
|
|
¥109.2
|
|
|
¥89.8
|
|
|
表示
|
|
|
¥99.9
|
|
|
¥92.1
|
|
|
¥87.2
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
10 A
|
100 V
|
610 mV
|
200 A
|
80 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
- YQ12RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥397.7
-
3,950在庫
|
Mouser 部品番号
755-YQ12RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
|
|
3,950在庫
|
|
|
¥397.7
|
|
|
¥255.9
|
|
|
¥174.4
|
|
|
¥138.6
|
|
|
表示
|
|
|
¥116.5
|
|
|
¥127.3
|
|
|
¥122.1
|
|
|
¥116.5
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
12 A
|
100 V
|
630 mV
|
220 A
|
90 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
- YQ12RSM10SDTL1
- ROHM Semiconductor
-
1:
¥348.8
-
3,668在庫
|
Mouser 部品番号
755-YQ12RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
|
|
3,668在庫
|
|
|
¥348.8
|
|
|
¥223.3
|
|
|
¥149.8
|
|
|
¥119.2
|
|
|
表示
|
|
|
¥97
|
|
|
¥108.7
|
|
|
¥101.7
|
|
|
¥97
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
12 A
|
100 V
|
630 mV
|
220 A
|
90 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
- YQ15RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥410.8
-
5,572在庫
|
Mouser 部品番号
755-YQ15RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
|
|
5,572在庫
|
|
|
¥410.8
|
|
|
¥264.1
|
|
|
¥179.3
|
|
|
¥143.4
|
|
|
表示
|
|
|
¥120.9
|
|
|
¥131.9
|
|
|
¥127.1
|
|
|
¥120.9
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
15 A
|
100 V
|
640 mV
|
230 A
|
100 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
- YQ15RSM10SDTL1
- ROHM Semiconductor
-
1:
¥358.6
-
4,095在庫
|
Mouser 部品番号
755-YQ15RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
|
|
4,095在庫
|
|
|
¥358.6
|
|
|
¥229.8
|
|
|
¥155
|
|
|
¥123.2
|
|
|
表示
|
|
|
¥101.1
|
|
|
¥113
|
|
|
¥105.8
|
|
|
¥101.1
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
15 A
|
100 V
|
640 mV
|
230 A
|
100 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
- YQ20BGE10SDTL
- ROHM Semiconductor
-
1:
¥342.3
-
4,797在庫
|
Mouser 部品番号
755-YQ20BGE10SDTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
|
|
4,797在庫
|
|
|
¥342.3
|
|
|
¥218.4
|
|
|
¥146.5
|
|
|
¥117
|
|
|
¥99.3
|
|
|
表示
|
|
|
¥106.4
|
|
|
¥94.5
|
|
最低: 1
複数: 1
:
2,500
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-252-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
150 A
|
80 uA
|
+ 150 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10CDFHTL
- ROHM Semiconductor
-
1:
¥564
-
1,900在庫
|
Mouser 部品番号
755-YQ20NL10CDFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1,900在庫
|
|
|
¥564
|
|
|
¥366.8
|
|
|
¥254.3
|
|
|
¥207
|
|
|
¥189.1
|
|
|
¥187.5
|
|
最低: 1
複数: 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Dual Anode Common Cathode
|
Si
|
20 A
|
100 V
|
650 mV
|
150 A
|
70 uA
|
+ 150 C
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10SEFHTL
- ROHM Semiconductor
-
1:
¥498.8
-
2,000在庫
|
Mouser 部品番号
755-YQ20NL10SEFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
2,000在庫
|
|
|
¥498.8
|
|
|
¥321.1
|
|
|
¥221.7
|
|
|
¥179.3
|
|
|
¥166.3
|
|
|
¥160.4
|
|
最低: 1
複数: 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
200 A
|
80 uA
|
+ 150 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
- YQ20NL10SETL
- ROHM Semiconductor
-
1:
¥430.3
-
1,988在庫
|
Mouser 部品番号
755-YQ20NL10SETL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
|
|
1,988在庫
|
|
|
¥430.3
|
|
|
¥278.7
|
|
|
¥190.7
|
|
|
¥151.9
|
|
|
¥143.9
|
|
|
¥130.1
|
|
最低: 1
複数: 1
:
1,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-263L-3
|
Single
|
Si
|
20 A
|
100 V
|
790 mV
|
200 A
|
80 uA
|
+ 150 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 3A SM SKY BARRI
- YQ3RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥288.5
-
3,852在庫
|
Mouser 部品番号
755-YQ3RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 3A SM SKY BARRI
|
|
3,852在庫
|
|
|
¥288.5
|
|
|
¥182.6
|
|
|
¥121.9
|
|
|
¥96
|
|
|
表示
|
|
|
¥74.5
|
|
|
¥87.5
|
|
|
¥80
|
|
|
¥74.5
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
3 A
|
100 V
|
580 mV
|
80 A
|
30 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
- YQ5RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥278.7
-
3,900在庫
|
Mouser 部品番号
755-YQ5RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
|
|
3,900在庫
|
|
|
¥278.7
|
|
|
¥177.7
|
|
|
¥118
|
|
|
¥92.7
|
|
|
表示
|
|
|
¥71.4
|
|
|
¥83.9
|
|
|
¥76.8
|
|
|
¥71.4
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
5 A
|
100 V
|
720 mV
|
80 A
|
25 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
- YQ5RSM10SDTL1
- ROHM Semiconductor
-
1:
¥246.1
-
3,955在庫
|
Mouser 部品番号
755-YQ5RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
|
|
3,955在庫
|
|
|
¥246.1
|
|
|
¥154.7
|
|
|
¥102.7
|
|
|
¥80.2
|
|
|
表示
|
|
|
¥59.7
|
|
|
¥73
|
|
|
¥67
|
|
|
¥59.7
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
5 A
|
100 V
|
720 mV
|
80 A
|
25 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 8A SM SKY BARRI
- YQ8RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥340.7
-
3,588在庫
|
Mouser 部品番号
755-YQ8RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 8A SM SKY BARRI
|
|
3,588在庫
|
|
|
¥340.7
|
|
|
¥216.8
|
|
|
¥145.1
|
|
|
¥116.1
|
|
|
表示
|
|
|
¥93.9
|
|
|
¥105.5
|
|
|
¥98.5
|
|
|
¥93.9
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
8 A
|
100 V
|
630 mV
|
140 A
|
60 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 8A SM SKY BARRI
- YQ8RSM10SDTL1
- ROHM Semiconductor
-
1:
¥298.3
-
3,905在庫
|
Mouser 部品番号
755-YQ8RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 8A SM SKY BARRI
|
|
3,905在庫
|
|
|
¥298.3
|
|
|
¥190.7
|
|
|
¥127
|
|
|
¥100.2
|
|
|
表示
|
|
|
¥78.6
|
|
|
¥91.4
|
|
|
¥84.3
|
|
|
¥78.6
|
|
最低: 1
複数: 1
:
4,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
TO-277A-3
|
Dual Anode Common Cathode
|
Si
|
8 A
|
100 V
|
630 mV
|
140 A
|
60 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 1A SM SKY BARRI
- YQ1VWM10ATR
- ROHM Semiconductor
-
1:
¥101.1
-
2,980在庫
-
3,000予想2026/07/21
|
Mouser 部品番号
755-YQ1VWM10ATR
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 1A SM SKY BARRI
|
|
2,980在庫
3,000予想2026/07/21
|
|
|
¥101.1
|
|
|
¥62.4
|
|
|
¥39.9
|
|
|
¥30.2
|
|
|
¥22.8
|
|
|
表示
|
|
|
¥26.9
|
|
|
¥20.7
|
|
|
¥17.9
|
|
|
¥17.3
|
|
最低: 1
複数: 1
:
3,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
PMDE-2
|
Single
|
Si
|
1 A
|
100 V
|
660 mV
|
25 A
|
6 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 2A SM SKY BARRI
- YQ2LAM10BTFTR
- ROHM Semiconductor
-
1:
¥207
-
2,256在庫
|
Mouser 部品番号
755-YQ2LAM10BTFTR
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 2A SM SKY BARRI
|
|
2,256在庫
|
|
|
¥207
|
|
|
¥103
|
|
|
¥67.2
|
|
|
¥51.7
|
|
|
¥40.1
|
|
|
表示
|
|
|
¥46.6
|
|
|
¥36.8
|
|
|
¥34.4
|
|
最低: 1
複数: 1
:
3,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
SOD-128-2
|
Single
|
Si
|
2 A
|
100 V
|
600 mV
|
70 A
|
15 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 2A SM SKY BARRI
- YQ2LAM10BTR
- ROHM Semiconductor
-
1:
¥145.1
-
2,587在庫
|
Mouser 部品番号
755-YQ2LAM10BTR
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 2A SM SKY BARRI
|
|
2,587在庫
|
|
|
¥145.1
|
|
|
¥89.8
|
|
|
¥58.2
|
|
|
¥44.5
|
|
|
¥34.4
|
|
|
表示
|
|
|
¥40.1
|
|
|
¥31.5
|
|
|
¥28.9
|
|
|
¥28.5
|
|
最低: 1
複数: 1
:
3,000
|
|
|
Schottky Diodes
|
SMD/SMT
|
SOD-128-2
|
Single
|
Si
|
2 A
|
100 V
|
600 mV
|
70 A
|
15 uA
|
+ 175 C
|
|
Reel, Cut Tape
|
|