TK100A10N1,S4X
製品仕様をご覧ください
メーカ:
詳細:
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
在庫: 141
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在庫:
-
141 すぐに出荷可能予期しないエラーが発生しました。後でもう一度お試しください。
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工場リードタイム:
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20 週間 表示されている時間を超える工場生産予定時間。
価格 (JPY)
| 数量 | ユニット価格 |
合計 額
|
|---|---|---|
| ¥897.6 | ¥898 | |
| ¥473.6 | ¥4,736 | |
| ¥441.6 | ¥44,160 | |
| ¥358.4 | ¥179,200 | |
| ¥355.2 | ¥355,200 |
データシート
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- JPHTS:
- 8541290100
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
日本
