|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
¥2,003.2
-
57在庫
|
Mouser 部品番号
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
57在庫
|
|
|
¥2,003.2
|
|
|
¥1,630.4
|
|
|
¥1,358.4
|
|
|
¥988.8
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
¥1,947.2
-
85在庫
|
Mouser 部品番号
511-SCT070H120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
85在庫
|
|
|
¥1,947.2
|
|
|
¥1,363.2
|
|
|
¥1,172.8
|
|
|
¥1,171.2
|
|
|
¥956.8
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
¥2,184
-
73在庫
-
1,200予想2026/03/16
|
Mouser 部品番号
511-SCT070HU120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
73在庫
1,200予想2026/03/16
|
|
|
¥2,184
|
|
|
¥1,529.6
|
|
|
¥1,353.6
|
|
|
¥1,104
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
¥1,420.8
-
592在庫
|
Mouser 部品番号
511-SCT1000N170
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
592在庫
|
|
|
¥1,420.8
|
|
|
¥972.8
|
|
|
¥718.4
|
|
|
¥630.4
|
|
|
¥628.8
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
¥2,544
-
510在庫
|
Mouser 部品番号
511-SCT20N120AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
510在庫
|
|
|
¥2,544
|
|
|
¥1,876.8
|
|
|
¥1,307.2
|
|
|
表示
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
¥4,665.6
-
1,597在庫
|
Mouser 部品番号
511-SCTL90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597在庫
|
|
|
¥4,665.6
|
|
|
¥3,569.6
|
|
|
¥2,915.2
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
¥2,752
-
593在庫
|
Mouser 部品番号
511-SCTW40N120G2VAG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593在庫
|
|
|
¥2,752
|
|
|
¥1,707.2
|
|
|
¥1,491.2
|
|
|
¥1,489.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
¥4,100.8
-
317在庫
-
NRND
|
Mouser 部品番号
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
317在庫
|
|
|
¥4,100.8
|
|
|
¥3,638.4
|
|
|
¥3,600
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
¥2,809.6
-
90在庫
|
Mouser 部品番号
511-SCTWA40N12G24AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90在庫
|
|
|
¥2,809.6
|
|
|
¥1,996.8
|
|
|
¥1,539.2
|
|
|
¥1,529.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
105 mOhms
|
- 18 V, + 18 V
|
5 V
|
63 nC
|
- 55 C
|
+ 200 C
|
290 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
¥2,745.6
-
9在庫
-
2,000予想2026/10/12
-
新製品
|
Mouser 部品番号
511-SCT025H120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
9在庫
2,000予想2026/10/12
|
|
|
¥2,745.6
|
|
|
¥1,948.8
|
|
|
¥1,819.2
|
|
|
¥1,484.8
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
¥4,622.4
-
151在庫
|
Mouser 部品番号
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
151在庫
|
|
|
¥4,622.4
|
|
|
¥3,523.2
|
|
|
¥3,252.8
|
|
|
¥2,809.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCTWA70N120G2V-4
- STMicroelectronics
-
1:
¥4,721.6
-
28在庫
|
Mouser 部品番号
511-SCTWA70N120G2V-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
|
|
28在庫
|
|
|
¥4,721.6
|
|
|
¥3,384
|
|
|
¥3,312
|
|
|
表示
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HIP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
30 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
¥3,876.8
-
600予想2026/10/26
|
Mouser 部品番号
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600予想2026/10/26
|
|
|
¥3,876.8
|
|
|
¥3,172.8
|
|
|
¥2,801.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥2,907.2
-
1,200取寄中
|
Mouser 部品番号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
1,200取寄中
取寄中:
600 予想2026/05/01
600 予想2026/08/10
|
|
|
¥2,907.2
|
|
|
¥2,328
|
|
|
¥2,012.8
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027HU65G3AG
- STMicroelectronics
-
1:
¥2,161.6
-
400予想2027/01/04
-
新製品
|
Mouser 部品番号
511-SCT027HU65G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
400予想2027/01/04
|
|
|
¥2,161.6
|
|
|
¥1,612.8
|
|
|
¥1,395.2
|
|
|
¥1,321.6
|
|
|
¥1,121.6
|
|
最低： 1
複数： 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
¥2,028.8
-
996予想2026/04/22
|
Mouser 部品番号
511-SCT040H120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996予想2026/04/22
|
|
|
¥2,028.8
|
|
|
¥1,422.4
|
|
|
¥1,236.8
|
|
|
¥1,235.2
|
|
|
¥1,009.6
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
¥2,001.6
-
1,113予想2026/03/18
|
Mouser 部品番号
511-SCT055HU65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,113予想2026/03/18
|
|
|
¥2,001.6
|
|
|
¥1,411.2
|
|
|
¥1,224
|
|
|
¥1,000
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
¥1,468.8
-
844予想2026/11/23
|
Mouser 部品番号
511-SCT10N120AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
844予想2026/11/23
|
|
|
¥1,468.8
|
|
|
¥832
|
|
|
¥660.8
|
|
|
¥659.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
¥2,684.8
-
100取寄中
-
新製品
|
Mouser 部品番号
511-SCT025H120G3-7
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100取寄中
|
|
|
¥2,684.8
|
|
|
¥2,076.8
|
|
|
¥1,795.2
|
|
|
¥1,795.2
|
|
最低： 1
複数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
¥1,820.8
-
100取寄中
-
新製品
|
Mouser 部品番号
511-SCT040W120G3-4
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100取寄中
|
|
|
¥1,820.8
|
|
|
¥1,483.2
|
|
|
¥1,235.2
|
|
|
¥1,100.8
|
|
|
¥934.4
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
- SCTWA90N65G2V
- STMicroelectronics
-
1:
¥4,516.8
-
69予想2026/05/04
|
Mouser 部品番号
511-SCTWA90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
|
|
69予想2026/05/04
|
|
|
¥4,516.8
|
|
|
¥2,926.4
|
|
|
¥2,800
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
- SCT011H75G3AG
- STMicroelectronics
-
1:
¥3,715.2
-
非在庫リードタイム 16 週間
-
新製品
|
Mouser 部品番号
511-SCT011H75G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
|
|
非在庫リードタイム 16 週間
|
|
|
¥3,715.2
|
|
|
¥3,097.6
|
|
|
¥3,096
|
|
|
¥2,592
|
|
|
表示
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
- SCT014HU65G3AG
- STMicroelectronics
-
600:
¥2,264
-
非在庫リードタイム 18 週間
-
新製品
|
Mouser 部品番号
511-SCT014HU65G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
|
|
非在庫リードタイム 18 週間
|
|
|
¥2,264
|
|
|
見積り
|
|
|
見積り
|
|
最低： 600
複数： 600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
- SCT014TO65G3
- STMicroelectronics
-
1,800:
¥1,756.8
-
非在庫リードタイム 19 週間
-
新製品
|
Mouser 部品番号
511-SCT014TO65G3
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
|
|
非在庫リードタイム 19 週間
|
|
最低： 1,800
複数： 1,800
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3-7
- STMicroelectronics
-
1,000:
¥1,576
-
非在庫リードタイム 16 週間
-
新製品
|
Mouser 部品番号
511-SCT018H65G3-7
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
非在庫リードタイム 16 週間
|
|
最低： 1,000
複数： 1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
-10 V, 22 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
日本