|
|
SiC MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R014M1HXKSA1
- Infineon Technologies
-
1:
¥5,026.2
-
1,139在庫
-
NRND
|
Mouser 部品番号
726-IMW120R014M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package
|
|
1,139在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
|
1 Channel
|
1.2 kV
|
127 A
|
14 mOhms
|
- 10 V, + 23 V
|
4.2 V
|
110 nC
|
- 55 C
|
+ 150 C
|
455 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET SiC, MOSFET, 40mohm, 1200V, TO-263-7XL, Industrial
- C3M0040120J1
- Wolfspeed
-
1:
¥2,156
-
661在庫
|
Mouser 部品番号
941-C3M0040120J1
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 40mohm, 1200V, TO-263-7XL, Industrial
|
|
661在庫
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
|
1 Channel
|
1.2 kV
|
64 A
|
53.5 mOhms
|
- 8 V, + 19 V
|
3.6 V
|
94 nC
|
- 40 C
|
+ 150 C
|
272 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET SiC, MOSFET, 75mO, 1200V, TO-247-4, 175C capable, Industrial
- C3M0075120K-A
- Wolfspeed
-
1:
¥1,451.7
-
670在庫
|
Mouser 部品番号
941-C3M0075120K-A
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 75mO, 1200V, TO-247-4, 175C capable, Industrial
|
|
670在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
32 A
|
90 mOhms
|
- 8 V, + 19 V
|
3.6 V
|
53 nC
|
- 40 C
|
+ 175 C
|
136 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R057M1HXTMA1
- Infineon Technologies
-
1:
¥1,561.3
-
1,995在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R057M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1,995在庫
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
39 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
161 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R163M1HXTMA1
- Infineon Technologies
-
1:
¥1,034.8
-
1,000在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R163M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1,000在庫
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
17 A
|
217 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
27 nC
|
- 55 C
|
+ 175 C
|
85 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R022M1HXTMA1
- Infineon Technologies
-
1:
¥3,026.3
-
143在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R022M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
143在庫
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
64 A
|
30 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
67 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
- CDMS24740-170 SL PBFREE
- Central Semiconductor
-
1:
¥6,569.3
-
17在庫
-
新製品
|
Mouser 部品番号
610-CDMS24740-170SL
新製品
|
Central Semiconductor
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
|
|
17在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.7 kV
|
26 A
|
40 mOhms
|
20 V
|
2.4 V
|
|
- 55 C
|
+ 175 C
|
28 W
|
Depletion
|
|
|
|
|
|
SiC MOSFET SiC, MOSFET 45mohm, 650V TO-263-7XL, Industrial
- C3M0045065J1
- Wolfspeed
-
1:
¥1,777.3
-
601在庫
|
Mouser 部品番号
941-C3M0045065J1
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET 45mohm, 650V TO-263-7XL, Industrial
|
|
601在庫
|
|
最低: 1
複数: 1
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
47 A
|
60 mOhms
|
- 8 V, + 19 V
|
3.6 V
|
61 nC
|
- 40 C
|
+ 150 C
|
147 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET 1200V 12mohm TO-247-4 G3R SiC MOSFET
- G3R12MT12K
- GeneSiC Semiconductor
-
1:
¥10,299.9
-
1,614在庫
|
Mouser 部品番号
905-G3R12MT12K
|
GeneSiC Semiconductor
|
SiC MOSFET 1200V 12mohm TO-247-4 G3R SiC MOSFET
|
|
1,614在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
111 A
|
12 mOhms
|
- 10 V, + 22 V
|
2.7 V
|
288 nC
|
- 55 C
|
+ 175 C
|
567 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R107M1HXTMA1
- Infineon Technologies
-
1:
¥1,119.5
-
753在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R107M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
753在庫
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
24 A
|
141 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
35 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R048M1HXTMA1
- Infineon Technologies
-
1:
¥1,684.3
-
1,019在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R048M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1,019在庫
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
45 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 175 C
|
183 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R072M1HXTMA1
- Infineon Technologies
-
1:
¥1,234.1
-
861在庫
-
NRND
|
Mouser 部品番号
726-IMBG65R072M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
861在庫
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
33 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 175 C
|
140 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET 1700V 450mohm TO-247-3 G3R SiC MOSFET
- G3R450MT17D
- GeneSiC Semiconductor
-
1:
¥1,197.6
-
1,702在庫
|
Mouser 部品番号
905-G3R450MT17D
|
GeneSiC Semiconductor
|
SiC MOSFET 1700V 450mohm TO-247-3 G3R SiC MOSFET
|
|
1,702在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.7 kV
|
7 A
|
450 mOhms
|
- 5 V, + 15 V
|
2.7 V
|
13 nC
|
- 55 C
|
+ 175 C
|
70 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET TO263 1.2KV 75A N-CH SIC
- SCT4018KWATL
- ROHM Semiconductor
-
1:
¥4,634.2
-
994在庫
-
新製品
|
Mouser 部品番号
755-SCT4018KWATL
新製品
|
ROHM Semiconductor
|
SiC MOSFET TO263 1.2KV 75A N-CH SIC
|
|
994在庫
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7LA
|
1 Channel
|
1.2 kV
|
75 A
|
23.4 mOhms
|
- 4 V, + 21 V
|
4.8 V
|
170 nC
|
|
+ 175 C
|
|
Enhancement
|
|
|
|
|
|
SiC MOSFET Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
- GP3T020A120H
- SemiQ
-
1:
¥2,089.5
-
391在庫
-
新製品
|
Mouser 部品番号
148-GP3T020A120H
新製品
|
SemiQ
|
SiC MOSFET Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
|
|
391在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247-4L
|
1 Channel
|
1.2 kV
|
280 A
|
25 mOhms
|
- 4.5 V, + 18 V
|
4 V
|
234 nC
|
- 55 C
|
+ 175 C
|
429 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET SiC, MOSFET, 900mO, 1700V, TO-263-7 T&R, Industrial
- C3M0900170J-TR
- Wolfspeed
-
1:
¥985
-
2,442在庫
-
新製品
|
Mouser 部品番号
941-C3M0900170J-TR
新製品
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 900mO, 1700V, TO-263-7 T&R, Industrial
|
|
2,442在庫
|
|
最低: 1
複数: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1700 V
|
4.4 A
|
1.25 Ohms
|
- 8 V, + 20 V
|
4.2 V
|
8 nC
|
- 55 C
|
+ 175 C
|
41 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
¥2,433.4
-
997在庫
-
750取寄中
-
新製品
|
Mouser 部品番号
726-IMCQ120R026M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
997在庫
750取寄中
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
1 Channel
|
1.2 kV
|
82 A
|
67 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
63.4 nC
|
- 55 C
|
+ 175 C
|
405 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R034M2HXTMA1
- Infineon Technologies
-
1:
¥2,061.3
-
1,507在庫
-
750取寄中
-
新製品
|
Mouser 部品番号
726-IMCQ120R034M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,507在庫
750取寄中
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
1 Channel
|
1.2 kV
|
64 A
|
89 mOhms
|
- 10 V, + 25 C
|
5.1 V
|
48.7 nC
|
- 55 C
|
+ 175 C
|
326 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R040M2HXTMA1
- Infineon Technologies
-
1:
¥1,916.8
-
675在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R040M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
675在庫
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
1 Channel
|
1.2 kV
|
56 A
|
104 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
42.4 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
¥1,609.5
-
314在庫
-
750予想2026/11/30
-
新製品
|
Mouser 部品番号
726-IMCQ120R053M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
314在庫
750予想2026/11/30
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
1 Channel
|
1.2 kV
|
43 A
|
138 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
32.8 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
¥1,413.5
-
2,155在庫
-
新製品
|
Mouser 部品番号
726-IMCQ120R078M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
2,155在庫
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
1 Channel
|
1.2 kV
|
31 A
|
205 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
23.2 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R012M2HXKSA1
- Infineon Technologies
-
1:
¥4,753.8
-
228在庫
-
240予想2026/11/30
-
新製品
|
Mouser 部品番号
726-IMZA120R012M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
228在庫
240予想2026/11/30
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
|
16 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
480 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R022M2HXKSA1
- Infineon Technologies
-
1:
¥3,160.9
-
267在庫
-
新製品
|
Mouser 部品番号
726-IMZA120R022M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
267在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
80 A
|
29 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R026M2HXKSA1
- Infineon Technologies
-
1:
¥2,626
-
310在庫
-
新製品
|
Mouser 部品番号
726-IMZA120R026M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
310在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
69 A
|
34 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
- IXSA110N65L2-7TR
- IXYS
-
1:
¥2,156
-
900在庫
-
新製品
|
Mouser 部品番号
747-IXSA110N65L2-7TR
新製品
|
IXYS
|
SiC MOSFET 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
|
|
900在庫
|
|
最低: 1
複数: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7L
|
1 Channel
|
650 V
|
111 A
|
33 mOhms
|
- 5 V, + 20 V
|
4.5 V
|
125 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|