UJ4C/SC 750V Gen 4 SiC FETs

onsemi UJ4C/SC 750V Gen 4 SiC FETs are high-performance devices that deliver Figures of Merit that lower conduction losses and increase efficiency at higher speeds, improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can enhance system performance without changing gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the onsemi UJ4C/SC FETs.

Results: 29
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
onsemi SiC MOSFETs 750V/6MOSICFETG4TO247-4 600In Stock
¥9,127.2
¥6,512.8
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-4 1 Channel 750 V 120 A 5.9 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 714 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TO247 642In Stock
¥2,320.4
¥1,332.1
¥1,320.5
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TO247-4 562In Stock
¥2,189.2
¥1,215.9
¥1,162.7
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TO263 486In Stock
Cut Tape
¥2,526.4
¥1,480
¥1,400.2
Reel
¥1,400.2
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TO263 648In Stock
Cut Tape
¥2,330.4
¥1,333.8
¥1,262.4
Reel
¥1,262.4
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TO263 1,266In Stock
Cut Tape
¥1,307.2
¥705.9
¥699.3
¥674.4
Reel
¥674.4
¥589.7
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TO263-7 278In Stock
Cut Tape
¥4,062.8
¥3,034.6
¥2,624.4
¥2,352
Reel
¥2,352
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TO247 1,258In Stock
¥2,541.3
¥1,533.1
¥1,305.5
¥1,200.9
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/11MOSICFETG4TO263-7 287In Stock
Cut Tape
¥4,913.2
¥3,891.7
¥3,629.3
¥3,282.1
Reel
¥3,282.1
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7L 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/5MOSICFETG4TOLL 1,630In Stock
Cut Tape
¥8,477.7
¥6,843.3
¥6,263.6
Reel
¥6,263.6
Min.: 1
Mult.: 1
Max.: 2,000
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 120 A 5 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 1.153 kW Enhancement SiC FET
onsemi SiC MOSFETs 750V/8MOSICFETG4TOLL 712In Stock
Cut Tape
¥5,627.5
¥4,111
¥3,924.9
¥3,891.7
Reel
¥3,891.7
Min.: 1
Mult.: 1
Max.: 2,000
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 106 A 8 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 600 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TOLL 2,497In Stock
Cut Tape
¥3,813.7
¥2,473.2
¥2,333.7
¥2,209.1
Reel
¥2,209.1
Min.: 1
Mult.: 1
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 53 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 349 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TOLL 2,815In Stock
Cut Tape
¥2,616.1
¥1,549.7
¥1,548.1
¥1,466.7
Reel
¥1,466.7
Min.: 1
Mult.: 1
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 44 A 33 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 205 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TOLL 2,525In Stock
Cut Tape
¥2,315.4
¥1,322.2
¥1,250.7
Reel
¥1,250.7
Min.: 1
Mult.: 1
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 35.6 A 44 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TOLL 3,269In Stock
Cut Tape
¥1,911.8
¥1,069.7
¥1,029.8
¥973.3
Reel
¥973.3
Min.: 1
Mult.: 1
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 27.8 A 58 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/23MOSICFETG4TOLL 1,266In Stock
Cut Tape
¥3,189.1
¥2,270.6
¥1,999.8
¥1,867
Reel
¥1,867
Min.: 1
Mult.: 1
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 64 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TO247 3,930In Stock
2,400Expected 10/19/2026
¥2,581.2
¥1,475
¥1,372
¥1,363.7
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/23MOSICFETG4TO247 313In Stock
600Expected 12/18/2026
¥2,049.7
¥1,129.5
¥1,066.4
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/23MOSICFETG4TO247 1,908In Stock
¥2,132.7
¥1,197.6
¥1,166
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-4 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TO247 211In Stock
¥2,596.1
¥1,468.3
¥1,451.7
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TO247 291In Stock
¥2,827
¥1,607.8
¥1,509.8
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TO247 371In Stock
¥2,026.4
¥1,116.2
¥1,051.4
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/9MOSICFETG4TO263-7 331In Stock
Cut Tape
¥5,564.4
¥4,052.8
¥3,836.9
Reel
¥3,836.9
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/11MOSICFETG4TO247-4 976In Stock
¥3,288.8
¥2,456.6
¥2,124.4
¥2,011.5
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-4 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TO247 10In Stock
600Expected 10/28/2027
¥3,890.1
¥2,406.8
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-4 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET