MACOM MAGX-100027 50V GaN on Si HEMT Amplifiers
MACOM MAGX-100027 50V GaN on Si (Gallium Nitride on Silicon) HEMT (High-Electron-Mobility Transistor) Amplifiers are high-power devices optimized for DC to 2.7GHz frequency operation. The MAGX-100027 Amplifiers support both CW (Continuous Wave) and pulsed operation with peak output power levels from 15W to 300W. Each MACOM MAGX-100027 50V GaN device integrates a pair of isolated, symmetric amplifiers and is internally pre-matched.
The MAGX-100027 GaN on Si HEMT Amplifiers are offered in lead-free TO-272S-2, TO-272S-4I, and DFN14 packages.
Features
- 0MHz to 2700MHz frequency range
- Suitable for linear and saturated applications
- CW and pulsed operation
- Internally pre-matched
- +260°C reflow compatible
- 50V operation
- 100% RF tested
- RoHS compliant
- Package options
- TO-272S-2
- TO-272S-4I
- DFN14
Applications
- Avionics
- Military radio
- Cellular infrastructure
- Radar
- RF energy
- Test and measurement
TO-272S-2 Pin Configuration
TO-272S-4I Pin Configuration
DFN15 Pin Configuration
公開: 2020-06-24
| 更新済み: 2024-06-04