|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
¥3,211.2
-
252在庫
-
600予想2026/11/16
-
新製品
|
Mouser 部品番号
511-SCT019HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
252在庫
600予想2026/11/16
|
|
|
¥3,211.2
|
|
|
¥2,641.6
|
|
|
¥2,284.8
|
|
|
¥2,284.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
|
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
¥1,811.2
-
969在庫
|
Mouser 部品番号
511-SCT040H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
969在庫
|
|
|
¥1,811.2
|
|
|
¥1,256
|
|
|
¥1,060.8
|
|
|
¥865.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
MOSFET N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
- STL260N4LF7
- STMicroelectronics
-
1:
¥505.6
-
2,681在庫
|
Mouser 部品番号
511-STL260N4LF7
|
STMicroelectronics
|
MOSFET N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
|
|
2,681在庫
|
|
|
¥505.6
|
|
|
¥329.6
|
|
|
¥228.8
|
|
|
¥193.6
|
|
|
¥177.6
|
|
|
¥157.1
|
|
最低： 1
複数： 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT5x6-8
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
¥2,563.2
-
2,329在庫
|
Mouser 部品番号
511-SCTL35N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,329在庫
|
|
|
¥2,563.2
|
|
|
¥1,811.2
|
|
|
¥1,665.6
|
|
|
¥1,664
|
|
|
表示
|
|
|
¥1,360
|
|
|
¥1,662.4
|
|
|
¥1,360
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
¥3,731.2
-
922在庫
-
新製品
|
Mouser 部品番号
511-SCT016H120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
922在庫
|
|
|
¥3,731.2
|
|
|
¥2,697.6
|
|
|
¥2,696
|
|
|
¥2,692.8
|
|
|
¥2,200
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011HU75G3AG
- STMicroelectronics
-
1:
¥4,001.6
-
274在庫
-
600予想2026/03/09
-
新製品
|
Mouser 部品番号
511-SCT011HU75G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
|
|
274在庫
600予想2026/03/09
|
|
|
¥4,001.6
|
|
|
¥2,940.8
|
|
|
¥2,939.2
|
|
|
¥2,401.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
¥3,281.6
-
739在庫
-
新製品
|
Mouser 部品番号
511-SCT020HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
739在庫
|
|
|
¥3,281.6
|
|
|
¥2,718.4
|
|
|
¥2,350.4
|
|
|
¥2,180.8
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥3,056
-
513在庫
-
新製品
|
Mouser 部品番号
511-SCT020W120G3-4AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
513在庫
|
|
|
¥3,056
|
|
|
¥2,521.6
|
|
|
¥2,500.8
|
|
|
¥2,457.6
|
|
|
表示
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥2,888
-
502在庫
-
新製品
|
Mouser 部品番号
511-SCT025W120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
502在庫
|
|
|
¥2,888
|
|
|
¥2,312
|
|
|
¥1,998.4
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥2,019.2
-
1,082在庫
-
新製品
|
Mouser 部品番号
511-SCT027H65G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
1,082在庫
|
|
|
¥2,019.2
|
|
|
¥1,420.8
|
|
|
¥1,235.2
|
|
|
¥1,046.4
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
¥2,161.6
-
1,011在庫
-
600予想2027/01/04
-
新製品
|
Mouser 部品番号
511-SCT040HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
1,011在庫
600予想2027/01/04
|
|
|
¥2,161.6
|
|
|
¥1,513.6
|
|
|
¥1,334.4
|
|
|
¥1,308.8
|
|
|
¥1,131.2
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
¥1,734.4
-
547在庫
-
新製品
|
Mouser 部品番号
511-SCT040W65G3-4
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
547在庫
|
|
|
¥1,734.4
|
|
|
¥1,036.8
|
|
|
¥985.6
|
|
|
¥820.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
¥2,003.2
-
641在庫
-
新製品
|
Mouser 部品番号
511-SCT040W65G3-4AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
641在庫
|
|
|
¥2,003.2
|
|
|
¥1,630.4
|
|
|
¥1,358.4
|
|
|
¥1,211.2
|
|
|
¥1,027.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥1,360
-
1,779在庫
-
新製品
|
Mouser 部品番号
511-SCT055TO65G3
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,779在庫
|
|
|
¥1,360
|
|
|
¥990.4
|
|
|
¥825.6
|
|
|
¥734.4
|
|
|
¥654.4
|
|
|
¥652.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
¥2,745.6
-
14在庫
-
2,000予想2026/10/12
-
新製品
|
Mouser 部品番号
511-SCT025H120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
14在庫
2,000予想2026/10/12
|
|
|
¥2,745.6
|
|
|
¥1,948.8
|
|
|
¥1,819.2
|
|
|
¥1,484.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
¥1,536
-
37在庫
-
新製品
|
Mouser 部品番号
511-SCT040TO65G3
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37在庫
|
|
|
¥1,536
|
|
|
¥1,080
|
|
|
¥857.6
|
|
|
¥699.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
¥3,288
-
160在庫
|
Mouser 部品番号
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
160在庫
|
|
|
¥3,288
|
|
|
¥2,361.6
|
|
|
¥2,294.4
|
|
|
¥1,873.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
¥2,476.8
-
202在庫
|
Mouser 部品番号
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
202在庫
|
|
|
¥2,476.8
|
|
|
¥1,748.8
|
|
|
¥1,593.6
|
|
|
¥1,300.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥2,542.4
-
532在庫
|
Mouser 部品番号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532在庫
|
|
|
¥2,542.4
|
|
|
¥1,968
|
|
|
¥1,904
|
|
|
¥1,854.4
|
|
|
表示
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
¥2,065.6
-
353在庫
|
Mouser 部品番号
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
353在庫
|
|
|
¥2,065.6
|
|
|
¥1,544
|
|
|
¥1,334.4
|
|
|
¥1,032
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
¥2,081.6
-
698在庫
|
Mouser 部品番号
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
698在庫
|
|
|
¥2,081.6
|
|
|
¥1,470.4
|
|
|
¥1,113.6
|
|
|
¥1,051.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
¥2,086.4
-
629在庫
|
Mouser 部品番号
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
629在庫
|
|
|
¥2,086.4
|
|
|
¥1,459.2
|
|
|
¥1,104
|
|
|
¥1,043.2
|
|
|
¥1,041.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
¥2,011.2
-
473在庫
-
1,200予想2026/04/20
|
Mouser 部品番号
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
473在庫
1,200予想2026/04/20
|
|
|
¥2,011.2
|
|
|
¥1,411.2
|
|
|
¥1,278.4
|
|
|
¥1,204.8
|
|
|
¥1,000
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
¥2,028.8
-
142在庫
|
Mouser 部品番号
511-SCT040HU65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
142在庫
|
|
|
¥2,028.8
|
|
|
¥1,422.4
|
|
|
¥1,236.8
|
|
|
¥1,011.2
|
|
|
¥1,009.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
¥2,003.2
-
57在庫
|
Mouser 部品番号
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
57在庫
|
|
|
¥2,003.2
|
|
|
¥1,630.4
|
|
|
¥1,358.4
|
|
|
¥988.8
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
日本
