|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
¥3,605.6
-
12在庫
-
600予想2027/02/15
-
新製品
|
Mouser 部品番号
511-SCT019HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
12在庫
600予想2027/02/15
|
|
|
¥3,605.6
|
|
|
¥2,692.8
|
|
|
¥2,058.7
|
|
|
¥2,058.7
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
|
|
|
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
¥2,795.5
-
2,311在庫
|
Mouser 部品番号
511-SCTL35N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,311在庫
|
|
|
¥2,795.5
|
|
|
¥1,975.6
|
|
|
¥1,695.2
|
|
|
¥1,691.9
|
|
|
¥1,584.4
|
|
|
¥1,584.4
|
|
最低： 1
複数： 1
:
3,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
¥3,000.8
-
551在庫
|
Mouser 部品番号
511-SCTW40N120G2VAG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
551在庫
|
|
|
¥3,000.8
|
|
|
¥1,861.5
|
|
|
¥1,736
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
¥5,085.6
-
1,597在庫
|
Mouser 部品番号
511-SCTL90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597在庫
|
|
|
¥5,085.6
|
|
|
¥3,719.7
|
|
|
¥3,633.3
|
|
|
¥3,630
|
|
|
¥3,395.3
|
|
|
¥3,395.3
|
|
最低： 1
複数： 1
:
3,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
¥3,799.5
-
588在庫
-
新製品
|
Mouser 部品番号
511-SCT016H120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
588在庫
|
|
|
¥3,799.5
|
|
|
¥2,749.8
|
|
|
¥2,744.9
|
|
|
¥2,743.3
|
|
|
¥2,562.4
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
¥3,709.9
-
304在庫
-
600予想2027/05/24
-
新製品
|
Mouser 部品番号
511-SCT020HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
304在庫
600予想2027/05/24
|
|
|
¥3,709.9
|
|
|
¥2,771
|
|
|
¥2,396.1
|
|
|
¥2,119
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥2,218.4
-
964在庫
-
新製品
|
Mouser 部品番号
511-SCT027H65G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
964在庫
|
|
|
¥2,218.4
|
|
|
¥1,548.5
|
|
|
¥1,258.4
|
|
|
¥1,175.2
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
¥2,296.7
-
596在庫
-
600予想2026/08/10
-
新製品
|
Mouser 部品番号
511-SCT040HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
596在庫
600予想2026/08/10
|
|
|
¥2,296.7
|
|
|
¥1,649.6
|
|
|
¥1,525.7
|
|
|
¥1,333.3
|
|
|
¥1,269.8
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥1,491.5
-
1,754在庫
-
新製品
|
Mouser 部品番号
511-SCT055TO65G3
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,754在庫
|
|
|
¥1,491.5
|
|
|
¥1,018.8
|
|
|
¥841.1
|
|
|
¥764.5
|
|
|
¥699.3
|
|
|
¥699.3
|
|
最低： 1
複数： 1
:
1,800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
¥1,563.2
-
37在庫
-
1,800予想2026/07/13
-
新製品
|
Mouser 部品番号
511-SCT040TO65G3
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37在庫
1,800予想2026/07/13
|
|
|
¥1,563.2
|
|
|
¥1,176.9
|
|
|
¥873.7
|
|
|
¥870.4
|
|
|
¥841.1
|
|
|
¥815
|
|
最低： 1
複数： 1
:
1,800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥3,015.5
-
505在庫
|
Mouser 部品番号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
505在庫
|
|
|
¥3,015.5
|
|
|
¥2,308.1
|
|
|
¥1,765.3
|
|
|
¥1,608.8
|
|
|
¥1,339.9
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥3,297.5
-
362在庫
|
Mouser 部品番号
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
362在庫
|
|
|
¥3,297.5
|
|
|
¥2,062
|
|
|
¥1,791.4
|
|
|
¥1,714.8
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥3,349.7
-
495在庫
-
1,200予想2026/08/31
|
Mouser 部品番号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
495在庫
1,200予想2026/08/31
|
|
|
¥3,349.7
|
|
|
¥2,107.6
|
|
|
¥1,912
|
|
|
¥1,814.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥3,088.9
-
443在庫
|
Mouser 部品番号
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
443在庫
|
|
|
¥3,088.9
|
|
|
¥1,921.8
|
|
|
¥1,665.9
|
|
|
¥1,576.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
¥2,771
-
307在庫
|
Mouser 部品番号
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
307在庫
|
|
|
¥2,771
|
|
|
¥2,648.8
|
|
|
¥1,201.3
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
¥2,143.5
-
385在庫
|
Mouser 部品番号
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
385在庫
|
|
|
¥2,143.5
|
|
|
¥1,498
|
|
|
¥1,225.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
¥2,264.1
-
530在庫
|
Mouser 部品番号
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
530在庫
|
|
|
¥2,264.1
|
|
|
¥1,590.9
|
|
|
¥1,214.4
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
¥1,882.7
-
537在庫
|
Mouser 部品番号
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
537在庫
|
|
|
¥1,882.7
|
|
|
¥1,129.6
|
|
|
¥1,007.3
|
|
|
¥956.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
¥2,187.5
-
481在庫
|
Mouser 部品番号
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481在庫
|
|
|
¥2,187.5
|
|
|
¥1,586
|
|
|
¥1,356.2
|
|
|
¥1,154
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
¥2,205.4
-
1,098在庫
|
Mouser 部品番号
511-SCT055HU65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,098在庫
|
|
|
¥2,205.4
|
|
|
¥1,680.5
|
|
|
¥1,400.2
|
|
|
¥1,222.5
|
|
|
¥1,165.5
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
¥2,060.3
-
311在庫
-
1,200予想2026/08/10
|
Mouser 部品番号
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
311在庫
1,200予想2026/08/10
|
|
|
¥2,060.3
|
|
|
¥1,724.5
|
|
|
¥1,302.4
|
|
|
¥1,163.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
¥3,351.3
-
60在庫
-
1,000予想2026/08/17
|
Mouser 部品番号
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
60在庫
1,000予想2026/08/17
|
|
|
¥3,351.3
|
|
|
¥2,405.9
|
|
|
¥2,337.4
|
|
|
¥2,180.9
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
¥2,691.1
-
151在庫
|
Mouser 部品番号
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
151在庫
|
|
|
¥2,691.1
|
|
|
¥1,905.5
|
|
|
¥1,820.7
|
|
|
¥1,623.5
|
|
|
¥1,325.2
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
¥2,145.1
-
127在庫
|
Mouser 部品番号
511-SCT040HU65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
127在庫
|
|
|
¥2,145.1
|
|
|
¥1,550.1
|
|
|
¥1,260
|
|
|
¥1,030.2
|
|
|
¥1,028.5
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
¥2,414
-
30在庫
-
600取寄中
|
Mouser 部品番号
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
30在庫
600取寄中
|
|
|
¥2,414
|
|
|
¥1,921.8
|
|
|
¥1,744.1
|
|
|
¥1,150.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
日本
